Hostname: page-component-78c5997874-xbtfd Total loading time: 0 Render date: 2024-11-10T11:49:33.880Z Has data issue: false hasContentIssue false
  • English
  • Français

Pulsed Laser Excited Microwave Photo Conductivity Applications to High Resolution Defect Diagnostics OP Ion and Laser Beam Modified Semiconductor Surface

Published online by Cambridge University Press:  25 February 2011

D. L. Khavroshin ,
A. A. Manenkov ,
S. Yu. Popov  and
S. Yu. Sokolov
D. L. Khavroshin
Affiliation:
General Physics Institute of Russian Academy of Sciences, Vavilov street 38, Moscow, 117942, Russia
A. A. Manenkov
Affiliation:
General Physics Institute of Russian Academy of Sciences, Vavilov street 38, Moscow, 117942, Russia
S. Yu. Popov
Affiliation:
General Physics Institute of Russian Academy of Sciences, Vavilov street 38, Moscow, 117942, Russia
S. Yu. Sokolov
Affiliation:
General Physics Institute of Russian Academy of Sciences, Vavilov street 38, Moscow, 117942, Russia
Get access

Abstract

A novel diagnostic technique for the studies of semiconductor surfaces is described. Experimental data on nonlocal modification effects in laser produced scribing, doping and annealing of ion implanted GaAs and Si are presented. Mechanisms of nonlocal structural and electric properties changes under modification are analyzed. Nonlocality phenomena are concluded to be universal for any strong modification procedure and very important for microelectronics technology.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 279: Symposium A – Beam-Solid Interactions–Fundamentals and Applications , 1992 , 699
Copyright
Copyright © Materials Research Society 1993

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Manenkov, A. A., Sokolov, S. Yu., Khavroshin, D. L., Izvestiya Acad. Nauk USSR, ser. fisicheskaya, 55(7), 1266 (1991).Google Scholar
2. Pavlov, P. V., Pashkov, V. I., Genkin, V. I. et al, Sov. Solid. State Phys., 15(6), 2857, (1973).Google Scholar
3. Bobrova, E. A., Vavilov, V. S., Galkin, G. N. et al, ‘Point defect propagation on macro distances (remote effect)’, Thesis of XII Semiconductor Physics Conference USSR, 1, 75 (1990).Google Scholar
4. Emelyanov, V. I., ‘Generation of regular surface defects structures under laser irradiation’, Thesis on ICONO '88, Minsk, 1, 4 (1988).Google Scholar
5. Antonov, S. L., Manenkov, A. A., et al, Poverknnost (Surface), 5, 151 (1991).Google Scholar
6. Fattakhov, Ya. V., Vasilyeva, T. N., Khaibullin, I. B., ‘Anisotropie local melting of ion implanted silicon: structural and thermoplastic effects’, Thesis of VII Int. conf. “Microelectronics'90” 2, 57 (1990).Google Scholar