Hostname: page-component-78c5997874-m6dg7 Total loading time: 0 Render date: 2024-11-14T06:15:43.754Z Has data issue: false hasContentIssue false
  • English
  • Français

Pulsed Laser Modification of the Growth of Ge Quantum Dots on Si(100)-(2x1)

Published online by Cambridge University Press:  20 July 2012

Ali Oguz Er  and
Hani E. Elsayed-Ali
Ali Oguz Er
Affiliation:
Department of Physics, Old Dominion University, Norfolk, VA USA 23529
Hani E. Elsayed-Ali*
Affiliation:
Department of Electrical and Computer Engineering and the Applied Research Center, Old Dominion University, Norfolk, VA USA 23529
*
*E-mail addresses: aer@uci.edu; helsayed@odu.edu
Get access

Abstract

Ge quantum dots were grown on Si(100)-(2x1) using pulsed laser deposition while the laser is also exciting the substrate during film growth. The growth mode and morphology was probed by scanning tunneling microscopy (STM). Epitaxial growth at a substrate temperature of ∼250 °C was achieved by using laser excitation of the substrate. The morphology of the quantum dots changed with increased laser excitation energy density although the faceting of the individual quantum dots remained the same. A purely electronic mechanism of enhanced surface diffusion of the Ge adatoms is proposed.

Keywords

ablationthin filmself-assembly
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1455: Symposium II – Nanoscale Materials Modification by Photon, Ion, and Electron Beams , 2012 , mrss12-1455-ii03-08
Copyright
Copyright © Materials Research Society 2012

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Pchelyakov, O., Bolkhovityanov, Y., Dvurechenskii, A., Sokolov, L., Nikiforov, A., Yakimov, A., Voigtländer, B., Semicon. 34, 1229–1247 (2000).10.1134/1.1325416Google Scholar
2. Eaglesham, D. J., Cerullo, M., Phys. Rev. Lett. 64, 1943–1946 (1990).10.1103/PhysRevLett.64.1943Google Scholar
3. Mo, Y. W., Savage, D. E., Swartzentruber, B. S., Lagally, M. G., Phys. Rev. Lett. 65, 1020–1023 (1990).10.1103/PhysRevLett.65.1020Google Scholar
4. Tomitori, M., Watanabe, K., Kobayashi, M., Nishikawa, O., Appl. Surf. Sci. 76-77, 322–328 (1994).10.1016/0169-4332(94)90362-XGoogle Scholar
5. Ross, F. M., Tromp, R. M., Reuter, M. C., Science 286, 1931–1934 (1999).10.1126/science.286.5446.1931Google Scholar
6. Medeiros-Ribeiro, G., Bratkovski, A. M., Kamins, T. I., Ohlberg, D. A. A., Williams, R. S., Science 279, 353–355 (1998).10.1126/science.279.5349.353Google Scholar
7. Brunner, K., Rep. Prog. Phys. 65, 27–72 (2002).10.1088/0034-4885/65/1/202Google Scholar
8. Horn-von Hoegen, M., Muller, B. H., Al-Falou, A., Henzler, M., Phys. Rev. Lett. 71, 3170–3173 (1993).10.1103/PhysRevLett.71.3170Google Scholar
9. Dorsch, W., Christiansen, S., Albrecht, M., Hansson, P. O., Bauser, E., Strunk, H. P., Surf. Sci. 331-333, 896–901 (1995).10.1016/0039-6028(95)00152-2Google Scholar
10. Capellini, G., De Seta, M., Evangelisti, F., Mat. Sci. Eng. B 89, 184–187 (2002).10.1016/S0921-5107(01)00846-7Google Scholar
11. Jin, G., Liu, J. L., and Wang, K. L., Appl. Phys. Lett. 83, 2847 (2003).10.1063/1.1616978Google Scholar
12. Ozgit, C., Donmez, I., Alevli, M., Biyikli, N., J. Vac. Sci. Tech. 30, 01A124-4 (2012).10.1116/1.3664102Google Scholar
13. Bean, J. C., Sheng, T. T., Feldman, L. C., Fiory, A. T., Lynch, R. T., Appl. Phys. Lett. 44, 102–104 (1984).10.1063/1.94571Google Scholar
14. Hegazy, M. S., Elsayed-Ali, H. E., Appl, J.. Phys. 104, 124302–5 (2008).Google Scholar
15. Er, A. O., Ren, W., and Elsayed-Ali, H., Appl. Phys. Lett. 98, 013108–3 (2011).10.1063/1.3537813Google Scholar
16. Er, A. O., Elsayed-Ali, H. E., Appl. Surf. Sci. 257, 8078–8084 (2011).10.1016/j.apsusc.2011.04.106Google Scholar
17. Yu, I. K., Tanimura, K., Solid Stat. Comm. 101, 429–432 (1997).10.1016/S0038-1098(96)00646-1Google Scholar
18. Ishizaka, A., Shiraki, Y., J. Electrochem. Soc. 133, 666–671 (1986).10.1149/1.2108651Google Scholar
19. Er, A. O. and Elsayed-Ali, H. E., J. Appl. Phys. 109, 084320–6 (2011).Google Scholar
20. Tanimura, K., Inami, E., Kanasaki, J., Hess, W. P., Phys. Rev. B 74, 035337–8 (2006).10.1103/PhysRevB.74.035337Google Scholar
21. Boyd, I. W., Moss, S. C., Boggess, T. F., Smirl, A. L., A, ppl. Phys. Lett. 45, 80–82 (1984).10.1063/1.94977Google Scholar
22. Srivastava, D., Garrison, B. J., Phys. Rev. B 46, 1472–1479 (1992).10.1103/PhysRevB.46.1472Google Scholar
23. Sumi, H., Surf. Sci. 248, 382–410 (1991).10.1016/0039-6028(91)91184-YGoogle Scholar
24. Kanasaki, J., Iwata, K., Tanimura, K. ,, Phys. Rev. Lett. 82, 644–647 (1999).10.1103/PhysRevLett.82.644Google Scholar
25. Hwang, N. M., Kim, D. Y., Int. Mater. Rev. 49, 171–190 (2004).10.1179/095066004225021891Google Scholar
26. Katayama, K., Shibamoto, K., Sawada, T., Chem. Phys. Lett. 345, 265–271 (2001).10.1016/S0009-2614(01)00887-9Google Scholar
27. Ruiz, R., Choudhary, D., Nickel, B., Toccoli, T., Chang, K.-C., Mayer, A. C., Clancy, P., Blakely, J. M., Headrick, R. L., Iannotta, S., Malliaras, G. G., Chem. Mat. 16, 4497–4508 (2004).10.1021/cm049563qGoogle Scholar
28. Park, B., Paoprasert, P., In, I., Zwickey, J., Colavita, P. E., Hamers, R. J., Gopalan, P., Evans, P. G., Adv. Mat. 19, 4353–4357 (2007).10.1002/adma.200602875Google Scholar