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Pulsed Raman Measurements of Phonon Populations: Time Reversal, Correction Factors, and All That

Published online by Cambridge University Press:  15 February 2011

A. Compaan ,
H.W. Lo ,
A. Aydinli  and
M.C. Lee
A. Compaan
Affiliation:
Max-Planck-Institut für Festkörperforschung, Heisenbergstrasse 1, 7000 Stuttgart 80, Federal Republic of Germany,
H.W. Lo
Affiliation:
Department of Physics, Kansas State University, Manhattan, Kansas 66506, USA
A. Aydinli
Affiliation:
Department of Physics, Kansas State University, Manhattan, Kansas 66506, USA
M.C. Lee
Affiliation:
Department of Physics, Kansas State University, Manhattan, Kansas 66506, USA
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Abstract

Transient optic phonon populations are measured in crystalline Si as a function of 532 nm laser energy density. The use of a continuously tunable pulsed dye laser as the Raman probe allows us to obtain, under exact experimental conditions, all correction factors necessary to extract the phonon population without the necessity of relying on room temperature or oven-heated conditions. We find the shift of the 520 cm−1 Raman-line to be consistent with the observed Stokes/anti-Stokes ratios indicating a maximum optic phonon temperature of 450 ± 100°C. A discussion is also given of the errors in several recent criticisms of the Raman results.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 13 , 1982 , 23
Copyright
Copyright © Materials Research Society 1983

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Footnotes

*

On sabbatical leave from Kansas State University

**

Present address: Dept. of Physics, Haceteppe University, Ankara, Turkey

References

REFERENCES

1.Compaan, A., Lo, H.W., Lee, M.C. and Aydinli, A., Phys. Rev. B 26, 1079 (1982).Google Scholar
2.Compaan, A., Aydinli, A., Lee, M.C. and Lo, H.W., in Laser and Electron-Beam Interactions with Solids, Appleton, B.R. and Celler, G.K., eds. (Elsevier, New York, 1982), p. 43.Google Scholar
3.Loudon, R., Proc. R. Soc. London A 275, 218 (1963),Google Scholar
Hayes, W. and Loudon, R., Scattering of Light by Crystals (Wiley, New York, 1978), p. 31.Google Scholar
4.Compaan, A., Genack, A.Z., Cummins, H.Z. and Washington, M. in Light Scattering in Solids, edited by Balkanski, M., Leite, R.C.C. and Porto, S.P.S. (Flammarion, Paris, 1975), p. 39.Google Scholar
5.Scott, J.F., Leite, R.C.C. and Damen, T.C., Phys. Rev. 188, 1285 (1969);Google Scholar
Richter, W., in Solid State Physics (Vol. 78 of Springer Tracts in Modern Physics, Höhler, G., ed.) Springer-Verlag, Berlin (1976);Google Scholar
Williams, P.F. and Porto, S.P.S., Phys. Rev. B 8, 1782 (1973).Google Scholar
6.Wood, R.F., Rasolt, M. and Jellison, G.E. Jr., Op.cit. ref. 2, p. 61.Google Scholar
7.Wood, R.F., Lowndes, D.H., and Giles, G.E., Op.cit. ref. 2, p. 67.Google Scholar
8.Wood, R.F., Lowndes, D.H., Jellison, G.E. and Modine, F.A., Appl. Phys. Lett. 41, 287 (1982).Google Scholar
9.Lo, H. W. and Compaan, A., Phys. Rev. Lett. 44, 1604 (1980).Google Scholar
10.Lo, H. W. and Compaan, A., Appl. Phys. Lett. 38, 179 (1981).Google Scholar
11.Compaan, A., Lo, H.W., Aydinli, A. and Lee, M.C., in Laser and Electron-Beam Solid Interactions and Materials Processing, Gibbons, , Hess, and Sigmon, , eds. (Elsevier, New York, 1981), p. 151.Google Scholar
12.Jellison, G.E. and Modine, F.A., Appl. Phys. Lett. 41, 180 (1982).Google Scholar
13.Renucci, J.B., Tyte, R.N. and Cardona, M., Phys. Rev. B 11, 3885 (1975).Google Scholar
14.von der Linde, D. and Wartman, G., Appl. Phys. Lett. (to be published, Oct. 1982);Google Scholar
von der Linde, D., Wartman, G., and Ozols, A. (preceeding paper).Google Scholar
15.Narayan, J., Op.cit. ref. 2, p. 141.Google Scholar
16.Narayan, J. and Fletcher, J., in Defects in Semiconductors, Narayan, and Tan, , eds. (North Holland, New York, 1981), p. 431.Google Scholar
17.Narayan, J., in Microscopy of Semiconducting Materials, 1981, Cullis, and Joyl, , eds. (Institute of Physics Conf. Ser. 60), p. 101.Google Scholar
18.Narayan, J., Fletcher, J., White, W.W. and Christie, H., J. Appl. Phys. 52, 7121 (1981).Google Scholar
19.Nemanich, R.J., Biegelson, D.K. and Hawkins, W.G. (private communication).Google Scholar
20.Balkanski, M., Wallis, R.F. and Haro, E., Physical Review (to be published).Google Scholar
21.Biswas, R. and Ambegaokar, V., Phys. Rev. B 26, 1980 (1982).Google Scholar
22.Cerdeira, F., Fjeldly, T. and Cardona, M., Phys. Rev. B 8, 4734 (1973).Google Scholar
23.Van Vechten, J.A., Op. cit. ref. 2, p. 49.Google Scholar
24.Liu, J.M., Kurz, H. and Bloembergen, N., Appl. Phys. Lett. 41, 643 (1982);Google Scholar
von der Linde, D. and Fabricius, N., Appl. Phys. Lett. (Nov. 15, 1982).Google Scholar
25.Jellison, G.E. Jr., Lowndes, D.H., and Wood, R.F. (following paper, this conference).Google Scholar