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Pulsed-Laser Annealing of Ion-Implanted GaAs: Theory and Exeriment

Published online by Cambridge University Press:  15 February 2011

R. F. Wood ,
Douglas H. Lowndes  and
W. H. Christie
R. F. Wood
Affiliation:
Solid State Division, Oak Ridge National Laboratory,**P. O. Box X, Oak Ridge, Tennessee, 37830, USA
Douglas H. Lowndes
Affiliation:
Solid State Division, Oak Ridge National Laboratory,**P. O. Box X, Oak Ridge, Tennessee, 37830, USA
W. H. Christie
Affiliation:
Solid State Division, Oak Ridge National Laboratory,**P. O. Box X, Oak Ridge, Tennessee, 37830, USA
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Abstract

It is shown that, in the pulsed-laser irradiation of crystalline or lightly damaged GaAs, good agreement is obtained between measured and calculated thresholds for melting, for catastrophic damage due to vaporization, and for the duration of surface melting at various energy densities. Good agreement between theory and experiment is also obtained for dopant profile spreading during pulsed-laser annealing.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1: Symposium – Laser and Electron-Beam Solid Interactions in Materials Processing , 1980 , 231
Copyright
Copyright © Materials Research Society 1981

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References

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