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Pyroelectric Properties of the Plt(10) Thin Film on the P-Doped Poly Silicon

Published online by Cambridge University Press:  10 February 2011

Seong Jun Kang ,
Yung Sup Yoon  and
Dong Il Kim
Seong Jun Kang
Affiliation:
Department of Electronic Materials & Device Engineering, Inha University, Inchon 402–751, Korea
Yung Sup Yoon
Affiliation:
Department of Electronic Materials & Device Engineering, Inha University, Inchon 402–751, Korea
Dong Il Kim
Affiliation:
Department of Electronic Materials & Device Engineering, Inha University, Inchon 402–751, Korea
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Abstract

We have studied the pyroelectric properties of the PLT(10) thin film deposited on a p-doped poly-Si electrode by using the sol-gel method. Measurement of the dielectric constant as a function of temperature shows the typical characteristics of a ferroelectric. The dielectric constant reaches a maximum at 295°C, which can be thought of as the Curie temperature. The PLT(10) thin film on p-doped poly-Si fabricated in this research shows excellent pyroelectric properties. The pyroelectric coefficient and the fiqures of merit, Fv and FD at room temperature are measured as 5.76 × 10−8 C/cm2 °C, 1.17 × 10−10C-cm/J and 0.93 × 10−8C-cm/J, respectively.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 433: Symposium T – Ferroelectric Thin Films V , 1996 , 413
Copyright
Copyright © Materials Research Society 1996

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