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Pyrolysis Studies and Deposition of Sb Films Using the Novel Omvpe Source (I-Pr)2 SbH

Published online by Cambridge University Press:  22 February 2011

Robert W. Gedridge Jr ,
Kenneth E. Lee  and
Charlotte K. Lowe-Ma
Robert W. Gedridge Jr
Affiliation:
Chemistry Division, Research Department, Naval Air Warfare Center Weapons Division, China Lake, CA 93555
Kenneth E. Lee
Affiliation:
Chemistry Division, Research Department, Naval Air Warfare Center Weapons Division, China Lake, CA 93555
Charlotte K. Lowe-Ma
Affiliation:
Chemistry Division, Research Department, Naval Air Warfare Center Weapons Division, China Lake, CA 93555
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Abstract

The novel antimony source compound di-isopropylantimony hydride, (i-Pr)2 was synthesized and evaluated for use as a volatile Sb-source compound for low temperature growth of Sb-containing semiconductor materials. (i-Pr)2SbH was pyrolyzed in a horizontal atmospheric pressure organometallic vapor phase epitaxy (OMVPE) reactor using Arand H2 as carrier gases. The gaseous exhaust products were analyzed by a residual gas analyzer. Complete pyrolysis of (i-Pr)2SbH in our OMVPE reactor occursaround 300°C and 350°C in Ar and H2, respectively. A comparison between the pyrolysis temperatures and pyrolysis byproducts with respect to a proposed decomposition mechanism of (i-Pr)2SbH is presented. Sb films were grown on Si(100) andSi(111) as low as 200° C. The Sb films were analyzed by Auger and X-ray diffraction. These polycrystalline Sb films were free of detectable carbon by AES. X-ray diffraction data indicated that these Sb films were highly oriented in the [000L] direction.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 282: Symposium E – Chemical Perspectives of Microelectronic Materials III , 1992 , 81
Copyright
Copyright © Materials Research Society 1993

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