Hostname: page-component-cd9895bd7-p9bg8 Total loading time: 0 Render date: 2024-12-29T14:21:45.467Z Has data issue: false hasContentIssue false
  • English
  • Français

PZT Thick Films for 100 MHz Ultrasonic Transducers Fabricated Using Chemical Solution Deposition Process

Published online by Cambridge University Press:  01 March 2011

Naoto Kochi ,
Takashi Iijima ,
Takashi Nakajima  and
Soichiro Okamura
Naoto Kochi
Affiliation:
Tokyo University of Science, 1-3 Kagurazaka, Shinjuku-ku, Tokyo 162-8601, Japan National Institute of Advanced Industrial Science and Technology, AIST Tsukuba West, 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
Takashi Iijima
Affiliation:
National Institute of Advanced Industrial Science and Technology, AIST Tsukuba West, 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
Takashi Nakajima
Affiliation:
Tokyo University of Science, 1-3 Kagurazaka, Shinjuku-ku, Tokyo 162-8601, Japan
Soichiro Okamura
Affiliation:
Tokyo University of Science, 1-3 Kagurazaka, Shinjuku-ku, Tokyo 162-8601, Japan
Get access

Abstract

To achieve ultrasonic transducers operating above 100 MHz, square pillar shaped Pb1.1(Zr0.53Ti0.47)O3 thick film structures were fabricated using a chemical solution deposition (CSD) process. The fabricated sample showed well-saturated P-E hysteresis curve and butterfly-shaped longitudinal displacement curve. The fabricated samples generated more than 100 MHz ultrasonic waves with a pulser/receiver. Electrical impedance properties of the samples were measured with an impedance analyzer. A number of spurious resonant modes were observed in the frequency range from 40 to 300 MHz. The characteristics of the sample were investigated by finite element method (FEM). The FEM simulations were in good agreement with the experimental results. For free-standing (substrate free) 10-μm-thick PZT film models, the resonant frequency of the thickness vibration mode was estimated to be 160 MHz with the FEM simulations. These results indicate that the substrate affects the behavior of the spurious resonant modes. Therefore, a sample structure was designed using the FEM simulation. The FEM result suggests that the backside of the substrate should be removed to reduce the substrate effects. Consequently, the thickness vibration mode was observed clearly at 160 MHz. This structure is applicable to the micromachined ultrasonic transducers (MUT) operating in the thickness vibration mode above 100 MHz.

Keywords

piezoelectricsimulationsol-gel
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1299: Symposium S – Microelectromechanical Systems—Materials and Devices IV , 2011 , mrsf10-1299-s04-02
Copyright
Copyright © Materials Research Society 2011

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Bernstein, J.J., Finberg, S.L., Houston, K., Niles, L.C., Chen, H.D., Cross, L.E., Li, K.K., and Udayakumar, K., IEEE Trans. Ultrason. Ferroelectr. Freq. Control., 44(5), 960–969. (1997)CrossRefGoogle Scholar
2. Khuri-Yakub, B. T., Cheng, C. H., Degertekin, F. L., Ergun, S., Hansen, S., X- Jin, C., and . Oralkan, O., Jpn. J. Appl. Phys., 39(5B), 2883–2887 (2000)CrossRefGoogle Scholar
3. Caronti, A., Carotenuto, R., and Pappalardo, M., J. Acoust. Soc. Am., 113(1), 279–288 (2003)CrossRefGoogle Scholar
4. Akasheh, F., Myers, T., Fraser, J. D., Bose, S., and Bandyopadhyay, A., Sens. Actuators A, 111, 275–287, (2004)CrossRefGoogle Scholar
5. Maréchal, P., Levassort, F., Holc, J., Tran-Huu-Hue, L.P., Kosec, M., and Lethiecq, M., IEEE Trans. Ultrason, Ferroelectr. Freq. Control, 53(8), 1524–1533 (2006)CrossRefGoogle Scholar
6. Trolier-mckinstry, S., Muralt, P., J. Electroceram., 12, 7–17 (2004).CrossRefGoogle Scholar
7. Baborowski, J., J. Electroceram., 12, 33–51 (2004)CrossRefGoogle Scholar
8. Wang, Z., Zhu, W., Miao, J., Zhu, H., Chao, C., and Tan, O.K., Sensors and Actuators A, 130-131, 485–490, (2006)CrossRefGoogle Scholar
9. Iijima, T., Sanada, N., Hiyama, K., Tsuboi, H., Okada, M., Mater. Res. Soc. Symp., 596, 223–228 (2000)CrossRefGoogle Scholar
10. Iijima, T., Osone, S., Shimojo, Y., and Nagai, H., Int. J. Appl. Ceram. Technol., 3(6), 442447 (2006).CrossRefGoogle Scholar
11. Kholkin, A. L., Wutchrich, Ch., Taylor, D. V., and Setter, N., Rev. Sci. Instrum., 67(5), 1935–1941 (1996)CrossRefGoogle Scholar
12. Kashiwagi, Y., Iijima, T., Nakajima, T., and Okamura, S., J. Ceram. Soc. Jpn., 118(8), 640–643 (2010)CrossRefGoogle Scholar
13. Berlincourt, D. A., Cmolik, C., and Jaffe, H., Proc. IRE 48, 220–229 (1960)CrossRefGoogle Scholar
14. Cheeke, J.D.N., Zhang, Y., Wang, Z., Lukacs, M., and Sayer, M., Proc. IEEE Ultrason. Symp., 1125–1128 (1998)Google Scholar