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Pzt Thin Films on a Lead Titanate Interlayer Prepared by rf Magnetron Sputering

Published online by Cambridge University Press:  21 February 2011

P. H. Ansari  and
A. Safari
P. H. Ansari
Affiliation:
Department of Ceramic Engineering, Rutgers University, Piscataway NJ 08855
A. Safari
Affiliation:
Department of Ceramic Engineering, Rutgers University, Piscataway NJ 08855
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Abstract

Ferroelectric lead zirconate titanate (PZT) films with a composition near the morphotropic phase boundary have been deposited by if magnetron sputtering on a Si substrate coated with silicon oxide, titanium, and platinum (Si/SiO2/Ti/Pt). Substrate temperature and oxygen partial pressure were changed during deposition to prepare films with controlled stoichiometry and perovskite structure. The effects of lead titanate (PT) as a buffer layer were investigated. Thin films of PT/PZT have a dielectric constant of 800 with a dissipation factor of 0.04 at 1 kHz. The remnant polarization of 8μC/cm2 and the coercive field of 50 kV/cm were measured. The effect of processing on the formation of perovskite phase and the electrical properties will be discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 310: Symposium N – Ferroelectric Thin Films III , 1993 , 467
Copyright
Copyright © Materials Research Society 1993

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