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Quantifying the Order of Spontaneous Ripple Patterns on Ion-Irradiated Si(111)

Published online by Cambridge University Press:  26 February 2011

H. Bola George ,
Ari-David Brown ,
Matthew R. McGrath ,
Jonah D. Erlebacher  and
Michael J. Aziz
H. Bola George
Affiliation:
hgeorge@fas.harvard.edu, Harvard University, Division of Engineering & Applied Sciences, 9 Oxford St., Cambridge, MA, 02138, United States, (617) 495-4469, (617) 496-4654
Ari-David Brown
Affiliation:
abrown@pop500.gsfc.nasa.gov, Johns Hopkins University, Department of Materials Science & Engineering, United States
Matthew R. McGrath
Affiliation:
matthew.r.mcgrath@vanderbilt.edu, Vanderbilt University, Physics Department, United States
Jonah D. Erlebacher
Affiliation:
jonah@jhu.edu, Johns Hopkins University, Department of Materials Science & Engineering, United States
Michael J. Aziz
Affiliation:
aziz@deas.harvard.edu, Harvard University, Division of Engineering & Applied Sciences, United States
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Abstract

Uniform keV ion irradiation causes a morphological instability known to result in the spontaneous formation of topographic ripple and dot patterns. The degree of order of these patterns, which has important implications for non-lithographic patterning applications, varies markedly with fabrication conditions. We investigate the influence of systematic variations of fabrication conditions, including current density, ion fluence and ion energy, on the degree of order of argon ion bombarded Si(111) surfaces. For quantifying order in sputter rippled topographic images, we develop an algorithm that evaluates the density of topological defects, such as ripple bifurcations and terminations, and suitably normalizes the result in order to present a scalar figure of merit: the normalized defect density. We discuss fabrication conditions that lead to extremely well ordered dot and ripple patterns upon irradiation.

Keywords

sputteringSimorphology
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 908: Symposium OO – Growth, Modification, and Analysis by Ion Beams at the Nanoscale , 2005 , 0908-OO02-04
Copyright
Copyright © Materials Research Society 2006

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