Hostname: page-component-745bb68f8f-b95js Total loading time: 0 Render date: 2025-01-28T02:24:10.610Z Has data issue: false hasContentIssue false
  • English
  • Français

Raman and optical absorption studies of silicon carbide structure damage by ion implantation

Published online by Cambridge University Press:  01 February 2011

Claudiu I. Muntele ,
Iulia C. Muntele ,
D. Ila ,
David B. Poker  and
Dale K. Hensley
Claudiu I. Muntele
Affiliation:
Center for Irradiation of Materials, Alabama A&M University, Normal, AL 35762, USA
Iulia C. Muntele
Affiliation:
Center for Irradiation of Materials, Alabama A&M University, Normal, AL 35762, USA
D. Ila
Affiliation:
Center for Irradiation of Materials, Alabama A&M University, Normal, AL 35762, USA
David B. Poker
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN, 37831, USA
Dale K. Hensley
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN, 37831, USA
Get access

Abstract

The work reported here deals with studying the defects induced by heavy ion implantation as well as the degree of crystalline lattice recovery after annealing in a high purity argon environment between 600 and 1600 °C. We implanted 6H, n-type silicon carbide with Pd and Au ions at 1015 ions/cm2, and used Micro-Raman (MR) and optical absorption (OA) spectroscopy techniques for investigating the lattice properties and damage evolution at various stages during the fabrication process.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 719: Symposium F – Defect- and Impurity-Engineered Semiconductors and Devices III , 2002 , F8.15
Copyright
Copyright © Materials Research Society 2002

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Muntele, C. I., Ila, D., Williams, E. K., Poker, D. B., Hensley, D. K. in Fundamental Mechanisms of Low-Energy-Beam-Modified Surface Growth and Processing (Mater. Res. Soc. Proc. 585, Pittsburgh, PA, 2000)Google Scholar
2. Muntele, C. I., Ila, D., Williams, E. K., Poker, D. B., and Hensley, D. K. in Silicon Carbide and Related Materials - Part 2 (Materials Science Forum Vols. 338-342 “”, Trans Tech Publications, 2000), p. 1443 Google Scholar
3. George, M. A., Ayoub, M. A., Ila, D., and Larkin, D. J., in Mater. Res. Soc. Proc. 572 edited by Binari, S., Burk, A., Mellock, M., and Nguyen, C., 2000, p. 123 Google Scholar
4. Chen, L., Hunter, G. W., Neudeck, P. G., Bansal, G., Petit, J. B., and D. Knight, in 43rd ANS National Symposium, 1998 Google Scholar
5. Skorupa, W., Heera, V., Pacaud, Y., and Weishart, H., Nuclear Instruments and Methods in Physics Research B 120 (1996) 114 Google Scholar
6. Muntele, I. C., Ila, D., Muntele, C. I., Poker, D. B., and Hensley, D. K., Fall MRS 2001 Proceedings, in print.Google Scholar
7. Wesch, W., Heft, A., Hobert, H., Peiter, G., Wendler, E., Bachmann, T., Nucl. Instrum. Meth. B 141 160 (1998)Google Scholar
8. Kreibig, Uwe and Vollmer, Michael, Optical Properties of Metal Clusters, Springer Series in Materials Science 25, Springer-Verlag, 1995.Google Scholar
9. Raman and Luminiscence Spectroscopy for Microelectronics, European Commission, 1998, p. 46–48.Google Scholar