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Raman Studies of a-Si:H/a-SiNx and a-Si/a-SiNx Superlattices

Published online by Cambridge University Press:  25 February 2011

I. Honma ,
T. Tanaka ,
H. Komiyama  and
K. Tanaka
I. Honma
Affiliation:
Department of Chemical Engineering, the Faculty of Engineering, University of Tokyo, Bunkyo-ku, Tokyo, 113Japan
T. Tanaka
Affiliation:
Department of Chemical Engineering, the Faculty of Engineering, University of Tokyo, Bunkyo-ku, Tokyo, 113Japan
H. Komiyama
Affiliation:
Department of Chemical Engineering, the Faculty of Engineering, University of Tokyo, Bunkyo-ku, Tokyo, 113Japan
K. Tanaka
Affiliation:
Electrotechnical Laboratory, Umezono, Tsukuba, Ibaraki,305, Japan
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Abstract

First observation is reported of the deposition rate dependence of Raman-detected structural disorder in a-Si:H/a-SiNx semiconductor superlattices as well as a-Si/a-SiNx ones. FWHM of TO-like Raman peak of a-Si:H in the multilayer structure rapidly decreases as deposition rate decreases, while that of a- Si decreases more slowly. The results demonstrate that the structural disorder of a-Si:H/a-SiNx decreases as time to grow a monolayer (TGM) increases in a time range of a second, and also suggest that hydrogen covering the growing surface enhances the structural-relaxation velocity of disordered amorphous network.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 149: Symposium E – Amorphous Silicon Technology - 1989 , 1989 , 669
Copyright
Copyright © Materials Research Society 1989

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References

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