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Raman Studies of Carrier Activation in Laser Annealed GaAs Capped with Silicon Nitride

Published online by Cambridge University Press:  28 February 2011

A. Compaan ,
S. C. Abbi ,
H. D. Yao ,
A. Bhat  and
F. Hashmi
A. Compaan
Affiliation:
Department of Physics, Kansas State University, Manhattan, KS 66506
S. C. Abbi
Affiliation:
Department of Physics, Kansas State University, Manhattan, KS 66506
H. D. Yao
Affiliation:
Department of Physics, Kansas State University, Manhattan, KS 66506
A. Bhat
Affiliation:
Department of Physics, Kansas State University, Manhattan, KS 66506
F. Hashmi
Affiliation:
Department of Physics, Kansas State University, Manhattan, KS 66506
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Abstract

Carrier concentrations exceeding 1019/cm3 in GaAs implanted with Si (2 × 1014/cm2 @ 140 keV) have been obtained by pulsed laser annealing with either a dye laser (λ = 728 nm) or a XeCl excimer laser (λ = 308 nm). Carrier concentrations were measured by plasmon Raman scattering over a wide range of anneal energy densities. Compared with capless laser annealing, much higher carrier activations were achieved when the annealing laser pulse was incident through a Si3N4 cap.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 74: Symposium A – Beam-Solid Interactions and Transient Processes , 1986 , 147
Copyright
Copyright © Materials Research Society 1987

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