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Rapid Synthesis of Dielectric Films by Microwave Assisted CVD

Published online by Cambridge University Press:  01 February 2011

Nicholas Ndiege ,
Vaidyanathan Subramanian ,
Mark Shannon  and
Rich Masel
Nicholas Ndiege
Affiliation:
ndiege@uiuc.edu, University of Illinois, Chemistry, 294 RAL, 600 S. Mathews ave., Urbana, IL, 61801, United States, 217 333 6666
Vaidyanathan Subramanian
Affiliation:
vsubrmnn@uiuc.edu, University of Illinois, Chemical & Biomolecular Engineering, 600 S. Mathews ave., Urbana, IL, 61801, United States
Mark Shannon
Affiliation:
mshannon@uiuc.edu, University of Illinois, Mechanical & Industrial Engineering, Urbana, IL, 61801, United States
Rich Masel
Affiliation:
r-masel@uiuc.edu, University of Illinois, Chemical & Biomolecular Engineering, 600 S. Mathews ave, Urbana, IL, 61801, United States
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Abstract

Film deposition methods have been the focus of renewed interest in the past decade due to calls for cheaper and more environment friendly deposition techniques as well as better quality of films. This paper describes a novel deposition technique: Microwave assisted chemical vapor deposition (MACVD). This technique utilizes inexpensive equipment and works at temperatures close to room temperature and ambient pressures. Deposition rates are very high (>1 micron a minute) and the resulting films are of high quality i.e. high density, stability. Conventional deposition techniques such as epitaxy, e-beam evaporation and LPCVD can achieve high quality films but the financial and environmental costs are high. This study considers the MACVD of a high k dielectric film (Ta2O5) on silicon for dielectric and insulation applications. Films generated are dense and stable with thicknesses varying from 60 nm to 62 microns. Depth profile studies of 575nm thick MACVD derived films show results similar to that of high quality films generated via MOCVD. Characterization of the resulting films was done using XRD, SEM, XPS, AES and profilometry techniques.

Keywords

dielectricTaoxide
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 929: Symposium II – Materials in Extreme Environments , 2006 , 0929-II02-06
Copyright
Copyright © Materials Research Society 2006

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References

1 High Dielectric Constant Materials: VLSI MOSFET Applications. ed.; Springer: New York, 2005; ‘Vol.’ p.Google Scholar
2 Robertson, J., Interfaces and defects of high-K oxides on silicon. Solid-State Electronics 2005, 49, (3), 283–293.Google Scholar
3 Chaneliere, C.; Autran, J. L.; Devine, R. A. B.; Balland, B., Tantalum pentoxide (Ta2O5) thin films for advanced dielectric applications. Materials Science & Engineering R-Reports 1998, 22, (6), 269–322.Google Scholar
4 Joshi, P. C.; Cole, M. W., Influence of postdeposition annealing on the enhanced structural and electrical properties of amorphous and crystalline Ta2O5 thin films for dynamic random access memory applications. Journal of Applied Physics 1999, 86, (2), 871–880.Google Scholar
5 Liu, L.; Wang, Y.; Gong, H., Annealing effects of tantalum films on Si and SiO2/Si substrates in various vacuums. Journal of Applied Physics 2001, 90, (1), 416–420.Google Scholar
6 Atanassova, E.; Konakova, R. V.; Mitin, V. F.; Koprinarova, J.; Lytvym, O. S.; Okhrimenko, O. B.; Schinkarenko, V. V.; Virovska, D., Effect of microwave radiation on the properties of Ta2O5-simicrostructures. Microelectronics Reliability 2005, 45, (1), 123–135.Google Scholar
7 Yoshimura, M., Importance of soft solution processing for advanced inorganic materials. Journal of Materials Research 1998, 13, (4), 796–802.Google Scholar
8 Roberts, B. A.; Strauss, C. R., rapid, Toward, “green”, predictable microwaveassisted synthesis. Accounts of Chemical Research 2005, 38, (8), 653–661.Google Scholar
9 Ono, H.; Hosokawa, Y.; Ikarashi, T.; Shinoda, K.; Ikarashi, N.; Koyanagi, K.; Yamaguchi, H., Formation mechanism of interfacial Si-oxide layers during postannealing of Ta2O5/Si. Journal of Applied Physics 2001, 89, (2), 995–1002.Google Scholar
10 Ozer, N.; Lampert, C. M., Structural and optical properties of sol-gel deposited proton conducting Ta2O5 films. Journal of Sol-Gel Science and Technology 1997, 8, (1-3), 703–709.Google Scholar
11 Ezhilvalavan, S.; Tseng, T. Y., Preparation and properties of tantalum pentoxide (Ta2O5) thin films for ultra large scale integrated circuits (ULSIs) application – A review. Journal of Materials Science-Materials in Electronics 1999, 10, (1), 9–31.Google Scholar
12 Kukli, K.; Aarik, J.; Aidla, A.; Kohan, O.; Uustare, T.; Sammelselg, V., Properties of Tantalum Oxide Thin-Films Grown by Atomic Layer Deposition. Thin Solid Films 1995, 260, (2), 135–142.Google Scholar
13 Toki, K.; Kusakabe, K.; Odani, T.; Kobuna, S.; Shimizu, Y., Deposition of SiO2 and Ta2O5 films by electron-beam-excited plasma ion plating. Thin Solid Films 1996, 282, (1-2), 401–403.Google Scholar
14 Werder, D. J.; Kola, R. R., Microstructure of Ta2O5 films grown by the anodization of TaNx. Thin Solid Films 1998, 323, (1-2), 6–9.Google Scholar
15 de la Hoz, A.; Diaz-Ortiz, A.; Moreno, A., Microwaves in organic synthesis. Thermal and non-thermal microwave effects. Chemical Society Reviews 2005, 34, (2), 164–178.Google Scholar
16 Kappe, C. O., Controlled microwave heating in modern organic synthesis. Angewandte Chemie-International Edition 2004, 43, (46), 6250–6284.Google Scholar
17 Vigil, E.; Ayllon, J. A.; Peiro, A. M.; Rodriguez-Clemente, R.; Domenech, X.; Peral, J., TiO2 layers grown from flowing precursor solutions using microwave heating. Langmuir 2001, 17, (3), 891–896.Google Scholar
18 Microwaves in Organic Synthesis. ed.; Wiley-VCH Verlag GmbH & Co. KGaA: Weinheim, 2002; ‘Vol.’ p.Google Scholar
19 Katz, J. D., Microwave Sintering of Ceramics. Annual Review of Materials Science 1992, 22, 153–170.Google Scholar
20 Kuhnert, N., Microwave-assisted reactions in organic synthesis – Are there any nonthermal microwave effects? Angewandte Chemie-International Edition 2002, 41, (11), 1863-+.Google Scholar
21 Strauss, C. R., Microwave-assisted reactions in organic synthesis – Are there any nonthermal microwave effects? Response. Angewandte Chemie-International Edition 2002, 41, (19), 3589–3590.Google Scholar
22 Pivonka, D. E.; Empfield, J. R., Real-time in situ Raman analysis of microwaveassisted organic reactions. Applied Spectroscopy 2004, 58, (1), 41–46.Google Scholar
23 Brooks, D. J.; Brydson, R.; Douthwaite, R. E., Microwave-induced-plasmaassisted synthesis of ternary titanate and niobate phases. Advanced Materials 2005, 17, (20), 2474-+.Google Scholar
24 Brooks, D. J.; Douthwaite, R. E., Microwave-induced plasma reactor based on a domestic microwave oven for bulk solid state chemistry. Review of Scientific Instruments 2004, 75, (12), 5277–5279.Google Scholar
25 Getvoldsen, G. S.; Elander, N.; Stone-Elander, S. A., UV monitoring of microwave-heated reactions – A feasibility study. Chemistry-a European Journal 2002, 8, (10), 2255–2260.Google Scholar
26 Stellman, C. M.; Aust, J. F.; Myrick, M. L., Situ Spectroscopic Study of Microwave Polymerization. Applied Spectroscopy 1995, 49, (3), 392–394.Google Scholar
27 Binner, J. G. P.; Hassine, N. A.; Cross, T. E., The Possible Role of the Preexponential Factor in Explaining the Increased Reaction-Rates Observed During the Microwave Synthesis of Titanium Carbide. Journal of Materials Science 1995, 30, (21), 5389–5393.Google Scholar