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Rapid Themal Annealing of Shallow. Diffused Contact Regions in GaAs

Published online by Cambridge University Press:  26 February 2011

N. J. Kepler ,
N. W. Cheung  and
P. K. Chu
N. J. Kepler
Affiliation:
Department of Electrical Engineering and Computer Sciences and the Electronics Research Laboratory. University of California. Berkeley. CA 94720
N. W. Cheung
Affiliation:
Department of Electrical Engineering and Computer Sciences and the Electronics Research Laboratory. University of California. Berkeley. CA 94720
P. K. Chu
Affiliation:
Charles Evans and Associates. San Mateo. CA 94402
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Abstract

Rapid thermal annealing (RTA) is used to form shallow and heavily-doped contact regions in undoped, semi-insulating GaAs. These layers are formed by using a high-intensity tungstenhalogen lamp to diffuse germanium and selenium from a deposited GeSe thin-film. RTA reduces surface degradation and permits better control of the diffusion profile than conventional furnace annealing. Optimal 20-second RTA occurs above a diffusion threshold at 950°C but below the failure of the SiO2 encapsulant at 1100°C. The n+ regions created have peak impurity concentrations over 1020/cm3 at depths under 750 Å with sheet resistances less than 60 Ω/▩. Non-alloyed ohmic contacts exhibit specific contact resistivites of 2.2 × 10−4 Ω · cm−2.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 52: Symposium B – Rapid Thermal Processing , 1985 , 383
Copyright
Copyright © Materials Research Society 1986

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