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Rapid Thermal Annealed Tiw/Ti Contact Metallization for Advanced Vlsi Si Circuits

Published online by Cambridge University Press:  25 February 2011

Henry W Chung  and
Agnes T. Yao
Henry W Chung
Affiliation:
Philips Research and Development Center, Philips Components-Signetics, 811 E. Arques Av., Sunnyvale, CA 94088
Agnes T. Yao
Affiliation:
Philips Research and Development Center, Philips Components-Signetics, 811 E. Arques Av., Sunnyvale, CA 94088
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Abstract

Rapid thermal annealed (RTA) bilayers of TiW/Ti were evaluated for contact metallization in advanced VLSI Si circuits. It was found that RTA and a minimum thickness of Ti are necessary to achieve consistently low p+ contact resistance. RTA has little effect on n+ and polysilicon contact resistances. With RTA, TiSi2 is formed at the Ti/Si interface and a thin nitrogen-containing layer is formed on the TiW surface. By controlling RTA temperature and time, the interaction between Si and TiW during RTA could be minimized while the gain factor of p-channel MOSFETs was not degraded. Moreover, the leakage currents of n+ and p+ contact chains did not increase after 30 minute anneals up to 525C

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 181: Symposium B – Advanced Metallizations in Microelectronics , 1990 , 199
Copyright
Copyright © Materials Research Society 1990

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References

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