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Rapid Thermal Annealing of Ion Implanted GaAs and InP

Published online by Cambridge University Press:  22 February 2011

K.V. Vaidyanathan  and
H.L. Dunlap
K.V. Vaidyanathan
Affiliation:
Hughes Research Laboratories, 3011 Malibu Canyon Road Malibu, California 90265
H.L. Dunlap
Affiliation:
Hughes Research Laboratories, 3011 Malibu Canyon Road Malibu, California 90265
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Abstract

This paper discusses the properties of high intensity lamp-annealed silicon or beryllium-implanted GaAs and InP samples. We find this annealing process can result in efficient activation of dopants. Conventional furnace annealing at the same temperature does not result in increased electrical activation of the dopants. High fluence silicon implants can be activated in anneal times as short as 2 seconds, while low fluence silicon implants require more extended annealing. Activation of low fluence implants in GaAs depends strongly on the properties of the bulk semiinsulating material.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 23 , 1983 , 687
Copyright
Copyright © Materials Research Society 1984

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References

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