Hostname: page-component-745bb68f8f-g4j75 Total loading time: 0 Render date: 2025-01-29T23:51:23.908Z Has data issue: false hasContentIssue false
  • English
  • Français

Rapid Thermal Annealing of Silicon Using an Ultrahigh Power Arc Lamp

Published online by Cambridge University Press:  15 February 2011

R. T. Hodgson ,
J. E. E. Baglin ,
A. E. Michel ,
S. Mader  and
J. C. Gelpey
R. T. Hodgson
Affiliation:
IBM Thomas J. watson Research Center, Yorktown Heights, New York 10598
J. E. E. Baglin
Affiliation:
IBM Thomas J. watson Research Center, Yorktown Heights, New York 10598
A. E. Michel
Affiliation:
IBM Thomas J. watson Research Center, Yorktown Heights, New York 10598
S. Mader
Affiliation:
IBM Corporation, Hopewell Junction, New York 12533
J. C. Gelpey
Affiliation:
Eaton Ion Implantation Systems, 16 Tozer Road, Beverly, MA 01915
Get access

Abstract

We have used an ultrahigh power, 100kW vortex cooled arc lamp to anneal As+ implant damage in <100> silicon wafers. When the wafer temperature was held above 1100°C for ∼1sec, TEM analysis indicated that the material was free of extended defects.The dopant diffused much more rapidly than would be expected from the usual models. However, preliminary results indicate that defect free material can be produced with dopant movement limited to ∼100Å.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 13 , 1982 , 355
Copyright
Copyright © Materials Research Society 1983

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1.Laser and Electron Beam Processing of Materials, White, C. W., Peercy, P. S., eds., Academic Press (1980).Google Scholar
2.Laser and Electron Beam Solid Interactions, Gibbons, J. F., Hess, L. D., Sigmond, T. W., eds., North Holland (1981).Google Scholar
3.Laser and Electron Beam Interactions with Solids, Appleton, B. K. and Celler, G. K., eds., North Holland (1982).Google Scholar
4.Rozgonyi, G. A., Baumgart, H., Uebbing, R. and Oppolzer, H., pg. 177 of Ref. 3.Google Scholar
5.Nishiyama, Kazuo, Arai, Michio and Watanabe, Naozo, J.J.A.P. 19, L563 (1980).Google Scholar
6.Fulks, R. T., Russo, C. J., Hanley, P. R. and Kamins, T. I., Appl. Phys. Lett. 39, 604 (1981).Google Scholar
7.Benton, J. L., Celler, G. K., Jacobson, D. C., Kimerling, L. C., Lischner, D. J., Miller, G. L. and Robinson, M. D., pg. 765 of Ref. 3.Google Scholar
8.Lischner, D. J. and Celler, G. K., pg. 759 of Ref. 3.Google Scholar
9.Gat, Arnon, IEEE EDL–2, 85 (1981).Google Scholar