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Rapid Thermal Oxidation of GeSi Strained Layers

Published online by Cambridge University Press:  28 February 2011

D. K. Nayak ,
K. Kamjoo ,
J. S. Park ,
J. C. S. Woo  and
K. L. Wang
D. K. Nayak
Affiliation:
Dept. of Electrical Engineering, University of California, Los Angeles, CA 90024
K. Kamjoo
Affiliation:
Dept. of Electrical Engineering, University of California, Los Angeles, CA 90024
J. S. Park
Affiliation:
Dept. of Electrical Engineering, University of California, Los Angeles, CA 90024
J. C. S. Woo
Affiliation:
Dept. of Electrical Engineering, University of California, Los Angeles, CA 90024
K. L. Wang
Affiliation:
Dept. of Electrical Engineering, University of California, Los Angeles, CA 90024
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Abstract

A cold-wall rapid thermal processor is used for the oxidation of commensurately grown GexSi1−x layers on Si substrates. It is shown for dry oxidation that the oxidation rate of GeSi is the same as that of Si. The dry oxidationrate of GeSi is independent of Ge concentration (up to 20 % considered in this study) in the GeSi layer. For wet oxidation, however, the rate of oxidation of the GexSi1−x layer is found to be significantly higher than that of pure Si, and the oxidation rate increases with the Ge concentration in GexSi1−x layer. Employing highfrequency and quasistatic Capacitance-Voltage measurements, it is found for a thin oxide that a fixed negative oxide charge density in the range of 1011 – 1012/cm2, and the interface trap level density (in the mid-gap region) of about 1012 /cm2.eV are present. Further, the density of this fixed oxide charge at the SiO2 /GeSi interface is found.to increase with the Ge concentration in the commensurately grown GeSi layers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 198: Symposium V – Epitaxial Heterostructures , 1990 , 521
Copyright
Copyright © Materials Research Society 1990

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References

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