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Rapid Thermal Processing of Hydrogen Silsesquioxane for Low Dielectric Constant Performance

Published online by Cambridge University Press:  10 February 2011

J. N. Bremmer ,
D. Gray ,
Y. Liu ,
K. Gruszynski  and
S. Marcus
J. N. Bremmer
Affiliation:
Dow Coming Corporation, M/S CO41A1, P.O. Box 944, Midland, MI 48686
D. Gray
Affiliation:
Dow Coming Corporation, M/S CO41A1, P.O. Box 944, Midland, MI 48686
Y. Liu
Affiliation:
Dow Coming Corporation, M/S CO41A1, P.O. Box 944, Midland, MI 48686
K. Gruszynski
Affiliation:
Dow Coming Corporation, M/S CO41A1, P.O. Box 944, Midland, MI 48686
S. Marcus
Affiliation:
STEAG Electronic Systems USA, 7755 S. Research Dr., Tempe, AZ 85284
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Abstract

Low dielectric constant hydrogen silsesquioxane films were achieved by rapid thermal cure processing with production viable equipment. A reduced dielectric constant of k = 2.5–2.6 is demonstrated by optimizing rapid thermal cure process conditions to produce low density hydrogen silsesquioxane thin films. This is a significant reduction relative to production proven furnace cure processed hydrogen silsesquioxane with k = 2.9. Concurrent with reduced k performance is a characteristic film expansion which contributes to formation of a low density structure. A mechanism for film expansion and relevance to low k performance is described; and issues relative to integration of rapid thermal processed low k hydrogen silsesquioxane are discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 565: Symposium O – Low-Dielectric Constant Materials V , 1999 , 273
Copyright
Copyright © Materials Research Society 1999

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References

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