Hostname: page-component-745bb68f8f-b95js Total loading time: 0 Render date: 2025-02-05T21:19:23.544Z Has data issue: false hasContentIssue false
  • English
  • Français

RBS/Chainneling and Ten Analysis of Heteroepitaxial Ge Films on GaAs Crown by Remote Plasma Enhanced Chemical Vapor Deposition

Published online by Cambridge University Press:  26 February 2011

N.R. Parikh ,
F V Hattangady ,
J.B. Posthill ,
M.L. King ,
R.A. Rudder ,
D.J. Vitkavage ,
R.J. Markunas  and
W.K. Chu
N.R. Parikh
Affiliation:
Dept. of Physics & Astronomy, U. North Carolina, Chapel Hill, NC 27514
F V Hattangady
Affiliation:
Research Triangle Institute, Research Triangle Park, NC 27709.
J.B. Posthill
Affiliation:
Dept. of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695–7907
M.L. King
Affiliation:
Dept. of Physics & Astronomy, U. North Carolina, Chapel Hill, NC 27514
R.A. Rudder
Affiliation:
Research Triangle Institute, Research Triangle Park, NC 27709.
D.J. Vitkavage
Affiliation:
Research Triangle Institute, Research Triangle Park, NC 27709.
R.J. Markunas
Affiliation:
Research Triangle Institute, Research Triangle Park, NC 27709.
W.K. Chu
Affiliation:
Dept. of Physics & Astronomy, U. North Carolina, Chapel Hill, NC 27514
Get access

Abstract

We have deposited thin Ge films on GaAs(111) crystals over a temperature range of 250-400° C by Remote Plasma Enhanced Chemical Vapor Deposition (RPECVD). Rutherford Backscattering (RBS)/channelinf analysis of these heteroepitaxial films were carried out using 2.07 MeV He ions channeled along the <111> axis. RBS/channeling analysis showed that the best Ce films were grown at a substrate temperature of 300° C. The minimum yield for <111> channeling on films deposited at 300° C was 0.08, slightly greater than that of the GaAs crystal. Films grown at temperatures below 300° C showed poor epitaxy. No channeling was observed for the film grown at 250° C. Films grown at substrate temperatures above 350° C showed high dechanneling near the interface and poor epitaxy indicating films are highly defective. The RBS/channeling results are correlated with microstructural characterization using transmission electron microscopy of these films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 102 , 1987 , 275
Copyright
Copyright © Materials Research Society 1988

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1.Sheldon, P., Yacobi, B.C., Jones, K.M., and Dunlavy, D.J., J. Appl. Phys. 58(11) 4186 (1985).Google Scholar
2.Lucovsky, G. and Tsu, D.V., J. Vac. Sci. Technol. A5, 2231 (1987).Google Scholar
3.Rudder, R.A., Fountain, G.G., and Markunas, R.J., J. Appl. Phys. 60, 3519 (1986)Google Scholar
4.Hattangady, S.V., Rudder, R.A., Vitkavage, D.J., and Markunas, R.J., This conference.Google Scholar
5.Chu, W.K., Mayer, J.W., and Nicolet, M-A., Backscattering Spectrmetry; Academic Press (1978).Google Scholar
6.Humphrehys, T.J., Das, K., Posthill, J.B., Parikh, N.R., Tarn, J., EI-Masry, N., Bedair, S.M., Chu, W.K. and Wortman, J.J., This conference.Google Scholar
7.Bauer, R.S. and McMenamin, J.C., J. Vac. Sci Technol. 15(4), 1444 (1978).Google Scholar