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Reaction between Low Dielectric Constant Fluorinated Polyimide and Aluminum

Published online by Cambridge University Press:  15 February 2011

H. Y. Tong ,
F. J. Szalkowski ,
F. G. Shi ,
B. Zhao ,
M. Brongo ,
S.-Q. Wang  and
P. K. Vasudev
H. Y. Tong
Affiliation:
School of Engineering, University of California, Irvine, CA 92697
F. J. Szalkowski
Affiliation:
School of Engineering, University of California, Irvine, CA 92697
F. G. Shi
Affiliation:
School of Engineering, University of California, Irvine, CA 92697
B. Zhao
Affiliation:
Rockwell Semiconductor Systems, Newport Beach, CA 92660
M. Brongo
Affiliation:
Rockwell Semiconductor Systems, Newport Beach, CA 92660
S.-Q. Wang
Affiliation:
Allied Signal Inc., Advanced Microelectronic Materials, Santa Clara, CA 95054
P. K. Vasudev
Affiliation:
SEMATECH, 2706 Montopolis Drive, Austin, TX 78741
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Abstract

Interactions between fluorinated polyimide and aluminum under different thermal treatment conditions have been investigated using transmission electron microscopy (TEM) and x-ray diffractometry (XRD) techniques over a wide temperature range. Our results suggest that the oxygen from the dielectric materials may result in the oxidation of the underlying aluminum either on the surface or along the grain boundary. This work implies that processing conditions, such as curing temperature and time, may play critical roles in affecting the performance of polymeric dielectric materials.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 476: Symposium N – Low-Dielectric Constant Materials III , 1997 , 75
Copyright
Copyright © Materials Research Society 1997

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References

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