Hostname: page-component-745bb68f8f-grxwn Total loading time: 0 Render date: 2025-02-05T21:25:40.273Z Has data issue: false hasContentIssue false
  • English
  • Français

Reaction of Amorphous Silicon with Cobalt and Nickel Silicides Before Disilicide Formation

Published online by Cambridge University Press:  15 February 2011

Jer-Shen Maa  and
Sheng Teng Hsu
Jer-Shen Maa
Affiliation:
Sharp Microelectronics Technology, 5700 NW Pacific Rim Blvd., Camas, WA 98607
Sheng Teng Hsu
Affiliation:
Sharp Microelectronics Technology, 5700 NW Pacific Rim Blvd., Camas, WA 98607
Get access

Abstract

A method is introduced to reduce substrate Si consumption of the salicide process by supplying extra Si from an amorphous Si film. Si is introduced into cobalt silicide and nickel silicide at the time when the silicide is converted into the disilicide phase. The reaction rate with amorphous Si is higher than that with single crystal Si if the amorphous Si has a low oxygen content.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 402: Symposium H – Silicide Thin Films-Fabrication, Properties and Applications , 1995 , 185
Copyright
Copyright © Materials Research Society 1996

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Lau, S.S. and van der Weg, W.F., Thin Films. Interdiffusion and Reactions, The Electrochemical Society, Pennington, New Jersey, 1978, pp. 433–480.Google Scholar
2. Lien, C.-D., Finetti, M., Nicolet, M.-A. and Lau, S.S., J. Electron. Mater.,13 (1984) 5678.Google Scholar
3. F.M.d'Heurle and Petersson, C.S., Thin Solid Films, 128 (1985) 283.Google Scholar
4. Roorda, S., Sinke, W.C., Poate, J.M., Jacobson, D.C., Dierker, S., Dennis, B.S., Eaglesham, D.J., Spaepen, F., and Fuoss, P., Physical review B, 44 (1991) 3702.Google Scholar