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Reaction Pathways for Nitrogen Incorporation at Si-SiO2 Interfaces

Published online by Cambridge University Press:  10 February 2011

K. Koh ,
H. Niimi  and
G. Lucovsky
K. Koh
Affiliation:
Departments of Materials Sciences and Engineering, Physics, and Electrical and Computer Engineering, North Carolina State University, Raleigh, NC 27965-8202
H. Niimi
Affiliation:
Departments of Materials Sciences and Engineering, Physics, and Electrical and Computer Engineering, North Carolina State University, Raleigh, NC 27965-8202
G. Lucovsky
Affiliation:
Departments of Materials Sciences and Engineering, Physics, and Electrical and Computer Engineering, North Carolina State University, Raleigh, NC 27965-8202
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Abstract

This paper presents experimental studies in which N-atoms have been incorporated at Si-SiO2 interfaces by forming the interface and oxide film by a 300°C remote plasma assisted nitridation/oxidation process using N2O. Process dynamics have been studied by on-line Auger electron spectroscopy (AES) by interrupted plasma processing. Plasma-activated species have been identified by in-situ mass spectrometry (MS) and optical emission spectroscopy (OES). Based on AES studies using N2O, O2 and sequenced N2O and O2 source gases, reaction pathways for N-atom incorporation i) at and/or ii) removal from buried Si-SiO2 interfaces have been identified, and contrasted with reaction pathways for nitridation using conventional furnace processing. The active species for N-atom incorporation is NO+, and for oxide growth, O2.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 446: Amorphous and Crystalline Insulating Thin Films–1996 , 1996 , 267
Copyright
Copyright © Materials Research Society 1997

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References

1 Saks, N.S., Ma, D.I. and Fowler., W.B., Appl. Phys. Lett. 67 (1995) 374.Google Scholar
2 Green, M.L., Brasen, D., Evans-Lutterodt, K.W., Feldman, L.C., Krisch, K., Lennard, W., Manchanda, L., Tang, H.-T., and Tang, M.-T., Appi. Phys. Lett. 65 (1994) 848.Google Scholar
3 Han, K.L., Wristers, D., Chen, T.S., Lin, C., Chen, K., Fulford, J., and Kwong, D.L., 1995 SDDM PC 1–2 (1995) 261.Google Scholar
4 Lee, D.R., Lucovsky, G., Denker, M.R., and Magee, C., J. Vac. Sei. Technol. A 13, (1995) 607.Google Scholar
5 Lee, D.R., Parker, C., Häuser, J.R., and Lucovsky, G., J. Vac. Sei. Technol. B13 (1995) 1778.Google Scholar
6 Yasuda, T., Ma, Y., Haberrnehl, S. and Lucovsky, G., Appl. Phys. Lett. 60 (1992) 434.Google Scholar
7 Bjorkman, C.H., Shearon, CE. Jr., Ma, Y., Yasuda, T., Lucovsky, G., Emmerichs, U., Meyer, C., Leo, K. and Kurz, H., J. Vac. Sei. Technol. All (1993) 964.Google Scholar
8 Emmerichs, U., Meyer, C., Bakker, HJ., Wolter, F., Kurz, h., Lucovsky, G., Bjorkman, C., Yasuda, T., Ma, Yi, Jing, Z., and Whitten, J.L., J. Vac. Sei. Technol. B12 (1994) 2484.Google Scholar
9 Meyer, C., Liipke, G., Emmerichs, U., Wolter, F., Kurz, H., Bjorkman, C.H., and Lucovsky, G., Phys. Rev. Lett. 74 (1995) 3001.Google Scholar
10 Gray, H.B., Electrons and Chemical Bonding (W.A. Benjamin, New York, 1964), Chap. II. Google Scholar