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Reactive MBE Growth of GaN and GaN:H on GaN/SiC Substrates

Published online by Cambridge University Press:  10 February 2011

M. A. L. Johnson ,
Zhonghai Yu ,
C. Boney ,
W. C. Hughes ,
J. W. Cook Jr. ,
J. F. Schetzina ,
H. Zhao ,
B. J. Skromme  and
J. A. Edmond
M. A. L. Johnson
Affiliation:
Department of Physics, N.C. State University, Raleigh, NC 27695, jan_schetzina@ncsu.edu
Zhonghai Yu
Affiliation:
Department of Physics, N.C. State University, Raleigh, NC 27695, jan_schetzina@ncsu.edu
C. Boney
Affiliation:
Department of Physics, N.C. State University, Raleigh, NC 27695, jan_schetzina@ncsu.edu
W. C. Hughes
Affiliation:
Department of Physics, N.C. State University, Raleigh, NC 27695, jan_schetzina@ncsu.edu
J. W. Cook Jr.
Affiliation:
Department of Physics, N.C. State University, Raleigh, NC 27695, jan_schetzina@ncsu.edu
J. F. Schetzina
Affiliation:
Department of Physics, N.C. State University, Raleigh, NC 27695, jan_schetzina@ncsu.edu
H. Zhao
Affiliation:
Department of Electrical Engineering, Arizona State University, Tempe, AZ 85287–5706
B. J. Skromme
Affiliation:
Department of Electrical Engineering, Arizona State University, Tempe, AZ 85287–5706
J. A. Edmond
Affiliation:
Cree Research, Inc., 2810 Meridian Parkway, Durham, NC 27713
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Abstract

Reactive N and H, created using rf plasma sources, were used to grow undoped GaN along with p-type GaN:Mg and p-type GaN:Mg:H thin films. By comparing the optical emission spectra from several rf sources with observed GaN grow rates, we deduce that nitrogen atoms and I stpositive series nitrogen molecules (3.95 eV binding energy) are the reactive species responsible for GaN film growth. A Mg ground state acceptor binding energy of about 224 meV was determined from low temperature photoluminescence (PL) experiments for both p-type GaN:Mg and p-type GaN:Mg:H films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 449: Symposium N – III-V Nitrides , 1996 , 215
Copyright
Copyright © Materials Research Society 1997

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References

REFERENCES

[1] Pearse, R. W. B. and Gaydon, A. G., The Identification of Molecular Spectra, Wiley, New York, 1963, pp. 209–220.Google Scholar
[2] Wright, A. N. and Winkler, C. A., Active Nitrogen, Academic, New York, 1968, pp.15–220.Google Scholar
[3] Stringanow, A. R. and Sventitskii, N. S., Tables of Spectral Lines of Neutral and Ionized Atoms, Plenum, New York, 1968, pp. 111–140b.Google Scholar
[4] Vaudo, R.P., Yu, X., Cook, J.W. Jr., and Schetzina, J.F., Optics Letters 18, p. 1843 (1993).Google Scholar
[5] Hughes, W. C., Cook, J.W. Jr, Schetzina, J. F., Ren, J. and Edmond, J. A., J. Vac. Sci. Technol. B 13, p. 1571 (1995).Google Scholar
[6] Skromme, B.J., Hutchins, J.W., Zhao, H., Kong, H.S., Leonard, M.T., Bulman, G.E., Abernathy, C.R., and Pearton, S.J., presented at the Electronic Materials Conference, Santa Barbara, Paper #W6, 1996.Google Scholar
[7] Dingle, R., Sell, D.D., Stokowski, S.E., and Ilegems, M., Phys. Rev. B 4, p. 1211 (1971).Google Scholar
[8] Ilegems, M. and Dingle, R., J. Appl. Phys. 44, p. 4234 (1973).Google Scholar
[9] Dean, P.J. and White, A.M., Solid State Electron. 21, p. 1351 (1978).Google Scholar
[10] Molva, E. and Magnea, N., Phys. Stat. Sol. (b) 102, p. 475 (1980).Google Scholar
[11] Dingle, R. and flegems, M., Solid State Commun. 9, p. 175 (1971).Google Scholar
[12] Yu, P.W., J. Appl. Phys. 48, p. 5043 (1977).Google Scholar