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The Reactivity of HCI and Methyltrichlorosilane with Silicon Carbide Surfaces
Published online by Cambridge University Press: 22 February 2011
Abstract
This work explores the reactivity of HCI and methyltrichlorosilane (MTS) with polycrystalline β-silicon carbide (SiC) surfaces using temperature-programmed desorption (TPD) and Auger electron spectroscopy. HCl is a corrosive gas that inhibits SiC deposition. The results show that HCl is adsorbed by SiC, forming a stable surface chloride that could inhibit SiC deposition. TPD shows that chlorine desorbs as HCI or SiCl4, confirming that HCl can etch SiC surfaces. Desorption is rate-limited by the breaking of Si-Cl bonds. MTS is also adsorbed by SiC; its desorption is similar to that of HCI.
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- Copyright © Materials Research Society 1993
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