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Real Time Observations of Dislocation-Mediated Plasticity in the Epitaxial AI (011)/Si(100) Thin Film System

Published online by Cambridge University Press:  10 February 2011

Eric A. Stach ,
U. Dahmen  and
W.D. Nix
Eric A. Stach
Affiliation:
National Center for Electron Microscopy, Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, email: EAStach@LBL.gov, http://ncem.lbl.gov
U. Dahmen
Affiliation:
National Center for Electron Microscopy, Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720: http://ncem.lbl.gov
W.D. Nix
Affiliation:
Department of Materials Science and Engineering, Stanford University, Palo Alto, CA 94305
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Abstract

Despite numerous theoretical and experimental studies of strain relaxation in metal films on silicon substrates, the exact mechanisms by which dislocations mediate plasticity in these structures are not well understood. To elucidate these mechanisms, we present results from in-situ transmission electron microscopy annealing of thin aluminum films grown on Si (100). As a model system, we have chosen to focus on aluminum films which contain two (011) epitaxial variants with respect to the silicon substrate. In this paper we discuss our observations of the glide and climb behavior of dislocations in these structures during thermal cycling. These observations give qualitative insight into the mechanisms by which dislocation motion accommodates thermally induced strains in thin metal films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 619: Symposium L – Recent Developments in Oxide & Metal Epitaxy – Theory… , 2000 , 27
Copyright
Copyright © Materials Research Society 2000

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References

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