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Real Time Stress Measurements During Growth of Aluminum Nitride on SI(111) and SI(001)

Published online by Cambridge University Press:  15 February 2011

W. J. Meng ,
J. A. Sell ,
G. L. Eesley  and
T. A. Perry
W. J. Meng
Affiliation:
Physics Department, General Motors Research and Development Center Warren, Michigan 48090
J. A. Sell
Affiliation:
Physics Department, General Motors Research and Development Center Warren, Michigan 48090
G. L. Eesley
Affiliation:
Physics Department, General Motors Research and Development Center Warren, Michigan 48090
T. A. Perry
Affiliation:
Physics Department, General Motors Research and Development Center Warren, Michigan 48090
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Abstract

We have performed real time measurements of intrinsic stresses during growth by reactive dc magnetron sputtering of aluminum nitride (AlN) thin films on silicon substrates in an UHV growth chamber. An experimental setup based on laser beam reflection is constructed such that substrate curvature as well as film thickness can be continuously monitored as growth proceeds. On Si(111) substrates, stress measurements were carried out during growth of both polycrystalline and epitaxial A1N films as a function of deposition pressure. This is the first such comparative study to our knowledge for the AlN/Si system. Our room temperature measurements on polycrystalline films corroborates previous post-growth measurements. Our high temperature measurements provide evidence of large intrinsic stresses and negligible stress relaxation during epitaxial growth of AlN on Si(111). We further compared stress behavior during both room temperature and high temperature growth of AlN films on Si(111) and Si(001) substrates. Our observations indicate while intrinsic stresses during room temperature growth can be compressive or tensile depending on plasma conditions, it is tensile during late stage growth at high temperatures.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 308: Symposium M1 – Thin Films: Stresses and Mechanical Properties IV , 1993 , 21
Copyright
Copyright © Materials Research Society 1993

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References

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