Published online by Cambridge University Press: 25 February 2011
We have developed a femtosecond ellipsometer by incorporating ellipsometric probe optics into a rapid scan femtosecond pump-and-probe experiment. The system allows near real-time display of the photo-induced reflectivity changes and provides complete characterization of the time-varying dielectric function. This ellipsometer is used ex situ to characterize the femtosecond response of relaxed, MBE-grown SixGe1−x alloys over the complete composition range. The results show. that the femtosecond response depends strongly on alloy composition in optically thick samples. Ge-like samples (x<0.37) show a characteristic two-component response which may be caused by intervalley L →Γ hole scattering and impact ionization. For a given alloy composition, the presence of interfacial strain or surface oxidation strongly alter the femtosecond response.