Hostname: page-component-78c5997874-v9fdk Total loading time: 0 Render date: 2024-11-13T02:06:50.224Z Has data issue: false hasContentIssue false

Recent Progress in SiC Microwave MESFETs

Published online by Cambridge University Press:  10 February 2011

S. T. Allen
Affiliation:
Cree Research, Inc., 4600 Silicon Drive, Durham, NC, 27703; (919) 361–5709
S. T. Sheppard
Affiliation:
Cree Research, Inc., 4600 Silicon Drive, Durham, NC, 27703; (919) 361–5709
W. L. Pribble
Affiliation:
Cree Research, Inc., 4600 Silicon Drive, Durham, NC, 27703; (919) 361–5709
R. A. Sadler
Affiliation:
Cree Research, Inc., 4600 Silicon Drive, Durham, NC, 27703; (919) 361–5709
T. S. Alcorn
Affiliation:
Cree Research, Inc., 4600 Silicon Drive, Durham, NC, 27703; (919) 361–5709
Z. Ring
Affiliation:
Cree Research, Inc., 4600 Silicon Drive, Durham, NC, 27703; (919) 361–5709
J. W. Palmour
Affiliation:
Cree Research, Inc., 4600 Silicon Drive, Durham, NC, 27703; (919) 361–5709
Get access

Abstract

SiC MESFET's have shown an RF power density of 4.6 W/mm at 3.5 GHz and a power added efficiency of 60% with 3 W/mm at 800 MHz, demonstrating that SiC devices are capable of very high power densities and high efficiencies. Single devices with 48 mm of gate periphery were mounted in a hybrid circuit and achieved a maximum RF power of 80 watts CW at 3.1 GHz with 38% PAE.

Type
Research Article
Copyright
Copyright © Materials Research Society 1999

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Joshi, R.P., J. Appl. Phys. 78, 5518(1995).10.1063/1.359670Google Scholar
[2] Slack, G.A, J. Appl. Phys. 35, 3460(1964).10.1063/1.1713251Google Scholar
[3] Weitzel, C.E., Palmour, J.W., Carter, C.H. Jr, Nordquist, K.J., Elect. Dev. Let. 15, 406(1994).10.1109/55.320983Google Scholar
[4] Sheppard, S. T., Doverspike, K., Pribble, W. L., Allen, S. T., Palmour, J. W., Kehias, L. T., Jenkins, T. J., 56th Annual Device Research Conference, 1998.Google Scholar