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Recent Progress in the Growth of Mid-ir Emitters by Metalorganic Chemical Vapor Deposition

Published online by Cambridge University Press:  10 February 2011

R. M. Biefeld ,
A. A. Allerman ,
S. R. Kurtz  and
K. C. Baucom
R. M. Biefeld
Affiliation:
Sandia National Laboratory, Albuquerque, New Mexico, 87185, USA
A. A. Allerman
Affiliation:
Sandia National Laboratory, Albuquerque, New Mexico, 87185, USA
S. R. Kurtz
Affiliation:
Sandia National Laboratory, Albuquerque, New Mexico, 87185, USA
K. C. Baucom
Affiliation:
Sandia National Laboratory, Albuquerque, New Mexico, 87185, USA
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Abstract

We report on recent progress and improvements in the metal-organic chemical vapor deposition (MOCVD) growth of mid-infrared lasers and using a high speed rotating disk reactor (RDR). The devices contain AlAsSb claddings and strained InAsSb active regions. These lasers have multi-stage, type I InAsSb/InAsP quantum well active regions. A semi-metal GaAsSb/InAs layer acts as an internal electron source for the multi-stage injection lasers and AlAsSb is an electron confinement layer. These structures are the first MOCVD multi-stage devices. Growth in an RDR was necessary to avoid the previously observed Al memory effects found in conventional horizontal reactors. A single stage, optically pumped laser yielded improved power (> 650 mW/facet) at 80 K and 3.8 μm. A multi-stage 3.8–3.9 μm laser structure operated up to T=170 K. At 80 K, peak power > 100 mW and a high slope-efficiency were observed in gain guided lasers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 484: Symposium F – Infrared Applications of Semiconductors II , 1997 , 19
Copyright
Copyright © Materials Research Society 1998

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References

[1] Allerman, A. A., Biefeld, R. M., and Kurtz, S. R., Appl. Phys. Lett. 69, 465 (1996).Google Scholar
[2] Kurtz, S. R., Allerman, A. A., and Biefeld, R. M., Appl. Phys. Lett. 70, 3188 (1997).Google Scholar
[3] Biefeld, R. M., Kurtz, S. R., and Allerman, A. A., J. Electronic Mater., 26, 903 (1997).Google Scholar
[4] Faist, J., Capasso, F., Sivco, D. L., Sirtori, C., Hutchinson, A. L., and Cho, A. Y., Science 264, 553 (1994).Google Scholar
[5] Yang, R. Q., Superlatt. Microstruct. 17, 77 (1995).Google Scholar
[6] Meyer, J. R., Vurgaftman, I., Yang, R. Q., and Ram-Mohan, L. R., Elect. Lett. 32, 45 (1996).Google Scholar
[7] Faist, J., Capasso, F., Sirtori, C., Sivco, D. L., Baillargeon, J. N., Hutchinson, A. L., Chu, S. N. G., and Cho., A. Y., Appl. Phys. Lett. 68, 3680 (1996).Google Scholar
[8] Lin, C. H., Yang, R. Q., Zhang, D., Murry, S. J., Pei, S. S., Allerman, A. A., and Kurtz, S. R., Elect. Lett. 33, 598 (1997).Google Scholar
[9] Yang, R. Q., Yang, B. H., Zhang, D., Lin, C. H., Murry, S. J., Wu, H., and Pei, S. S., Appl. Phys. Lett. 71, 2409 (1997).Google Scholar
[10] Breiland, W. G. and Evans, G. H., J. Electrochem. Soc., 138, 1806 (1991).Google Scholar
[ 11] Private Communication from McDaniel, D., USAF Phillips Laboratory, Albuquerque, NM.Google Scholar
[12] Choi, H.K. and Turner, G.W., Appl. Phys. Lett. 67, 332 (1995).Google Scholar