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Reciprocal Space X-Ray Mapping and Transmission Electron Microscopic Studies of Coincided δ-Inas and As-Cluster Superlattices in Gaas Films Grown by Molecular-Beam Epitaxy at Low Temperature

Published online by Cambridge University Press:  10 February 2011

V. V. Chaldyshev ,
N. A. Bert ,
N. N. Faleev ,
Yu. G. Musikhin ,
A. E. Kunitsyn ,
V. V. Preobrazhenskii ,
M. A. Putyato ,
B. R. Semyagin ,
P. Werner  and
Y. Takeda
V. V. Chaldyshev
Affiliation:
A.F.Ioffe Physical-Technical Institute, 194021, St.Petersburg, Russia
N. A. Bert
Affiliation:
A.F.Ioffe Physical-Technical Institute, 194021, St.Petersburg, Russia
N. N. Faleev
Affiliation:
A.F.Ioffe Physical-Technical Institute, 194021, St.Petersburg, Russia
Yu. G. Musikhin
Affiliation:
A.F.Ioffe Physical-Technical Institute, 194021, St.Petersburg, Russia
A. E. Kunitsyn
Affiliation:
A.F.Ioffe Physical-Technical Institute, 194021, St.Petersburg, Russia
V. V. Preobrazhenskii
Affiliation:
Institute of Semiconductor Physics, 630090, Novosibirsk, Russia.
M. A. Putyato
Affiliation:
Institute of Semiconductor Physics, 630090, Novosibirsk, Russia.
B. R. Semyagin
Affiliation:
Institute of Semiconductor Physics, 630090, Novosibirsk, Russia.
P. Werner
Affiliation:
Max-Planck-Institute of Microstructure Physics, Halle, Germany
Y. Takeda
Affiliation:
Nagoya University, 464-8603, Nagoya, Japan
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Abstract

InAs/GaAs superlattices with thin (0.5–1 monolayer) δ-InAs insertions were grown by molecular beam epitaxy at low (150–200°C) temperature. The as-grown samples contained up to 1020 cm−3 arsenic antisite defects. Transmission electron microscopic study revealed no extended defect and showed that the real thickness of δ-InAs insertions is 3–4 monolayers. This thickness seems to be due to short-range roughness of the growth surface. Low diffuse scattering and extended interference picture were observed for such superlattices by x-ray diffraction study. Superlattices of two-dimensional cluster sheets were produced by annealing of the δ-InAs/GaAs superlattices at 500–600°C. Precipitation of excess arsenic at InAs δ-layers was found to be accompanied by enhanced In-Ga intermixing, roughening the InAs δ-layers, and smoothing the x-ray interference picture. No evidence for any self-ordering in the system of nanoscale As clusters was revealed using x-ray mapping in reciprocal space.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 583 , 1999 , 143
Copyright
Copyright © Materials Research Society 2000

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References

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