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Recursive Image Charge Approach for Quantitative Characterization of Dielectric Thin Film Library Using Scanning Tip Microwave Near-field Microscopy

Published online by Cambridge University Press:  01 February 2011

Chen Gao ,
Bo Hu ,
Mengming Huang ,
Pu Zhang  and
Wen-han Liu
Chen Gao
Affiliation:
National Synchrotron Radiation Laboratory and Department of Physics, University of Science and Technology of China, Hefei, 230026, P. R. China
Bo Hu
Affiliation:
National Synchrotron Radiation Laboratory and Department of Physics, University of Science and Technology of China, Hefei, 230026, P. R. China
Mengming Huang
Affiliation:
National Synchrotron Radiation Laboratory and Department of Physics, University of Science and Technology of China, Hefei, 230026, P. R. China
Pu Zhang
Affiliation:
National Synchrotron Radiation Laboratory and Department of Physics, University of Science and Technology of China, Hefei, 230026, P. R. China
Wen-han Liu
Affiliation:
National Synchrotron Radiation Laboratory and Department of Physics, University of Science and Technology of China, Hefei, 230026, P. R. China
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Abstract

We developed a recursive image charge approach for quantitative characterizations of dielectric thin films using the scanning tip microwave near-field microscope. With this method, frequency shift of the microscope as functions of the dielectric constant and the thickness of a film can be effectively computed in a recursive way. We believe that this approach can promote the high-throughput characterization of the dielectric libraries.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 804: Symposium JJ – Combinatorial and Artificial Intelligence Methods in Materials Science II , 2003 , JJ9.8
Copyright
Copyright © Materials Research Society 2004

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References

REFERENCES

1. Wei, T., Xiang, X.-D., Wallace-Freedman, W. G., and Schultz, P. G., Appl. Phys. Lett., 68, 3506–3508, (1996)Google Scholar
2. Chang, H., Gao, C., Takeuchi, I., Yoo, Y., Wang, J., Schultz, P. G., and Xiang, X. -D., Appl. Phys. Lett., 72, 2185–2187, (1998)Google Scholar
3. Gao, C., Duewer, F., Lu, Y., and Xiang, X.-D., Appl. Phys. Lett., 73, 1146–1148, (1998)Google Scholar
4. Chen, Y.-C., Cheng, H.-F., Wang, G., Xiang, X.-D., Chiang, Y.-C., Liu, K. S., and Lin, I.-N., J. Eur. Ceram. Soc., 23, 2671–2675, (2003)Google Scholar
5. Zhang, S. T., Chen, Y. F., Sun, H. P., Pan, X. Q., Tan, W. S., Liu, Z. G., and Ming, N. B., J. Appl. Phys., 94, 544–550, (2003)Google Scholar
6. Okazaki, N., Odagawa, H., Cho, Y., Nagamura, T., Komiyama, D., Koida, T., Minami, H., Ahmet, P., Fukumura, T., Matsumoto, Y., Kawasaki, M., Chikyow, T., Koinuma, H., and Hasegawa, T., Appl. Surf. Sci., 189, 222–226, (2002)Google Scholar
7. Gao, C., Xiang, X.-D., Rev. Sci. Instrum., 69, 3846–3851, (1998)Google Scholar
8. Gao, C., Duewer, Fred, and Xiang, X.-D., Appl. Phys. Lett., 75, 3005–3007, (1999)Google Scholar
9. Lee, J. H., Hyun, S., and Char, K., Rev. Sci. Instrum., 72, 1425–1433, (2001)Google Scholar
10. Cheng, H.-F., Chen, Y.-C., Wang, G., Xiang, X.-D., Chen, G.-Y., Liu, K. S., and Lin, I.-N., J. Eur. Ceram. Soc., 23, 2667–2670, (2003)Google Scholar
11. Steinhauer, D. E., Vlahacos, C. P., Wellstood, F. C., Anlage, S. M., Canedy, C., Ramesh, R., Stainshevsky, A., and Melngailis, J., Rev. Sci. Instrum., 71, 2751–2758, (2000)Google Scholar