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Redistribution of Mn upon Annealing in Ferromagnetic Mn-implanted Si

Published online by Cambridge University Press:  26 February 2011

Martin Bolduc ,
Chaffra Awo-Affouda ,
Frank Ramos  and
Vincent P LaBella
Martin Bolduc
Affiliation:
mbolduc@mit.edu, Massachusetts Institute of Technology, Materials Science and Engineering, #13-4017, 77 Massachusetts Ave, Cambridge, Massachusetts, 02139, United States, 617-253-6898, 617-252-1020
Chaffra Awo-Affouda
Affiliation:
cawoaffouda@uamail.albany.edu, SUNY - Albany, College of Nanoscale Science and Engineering, United States
Frank Ramos
Affiliation:
framos@uamail.albany.edu, SUNY - Albany, College of Nanoscale Science and Engineering, United States
Vincent P LaBella
Affiliation:
vlabella@uamail.albany.edu, SUNY - Albany, College of Nanoscale Science and Engineering
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Abstract

The redistribution of implanted Mn ions in Si after thermal annealing is studied. P-type Si wafers were implanted with 300-keV Mn+ ions at 350°C to a dose of 1×1015 cm-2, and then annealed at 800 °C for 5 min. Ferromagnetic hysteresis loops were obtained at 10 K using a SQUID magnetometer both before and after annealing. The saturation magnetization increases by ∼2 × after the post-implant annealing, while the Mn redistributes with sharp peaks in concentration. The calculated point-defect profile created during the implantation process peaks around the Mn-depleted region, suggesting that the residual implant damage may play a role in the ferromagnetic behavior of Mn-implanted Si.

Keywords

ion-implantationspintronicSi
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 908: Symposium OO – Growth, Modification, and Analysis by Ion Beams at the Nanoscale , 2005 , 0908-OO17-03
Copyright
Copyright © Materials Research Society 2006

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References

[1] Ohno, H., Science 281, 951 (1998).Google Scholar
[2] Pearton, S. J., Abernathy, C. R., Norton, D. P., Hebard, A. F., Park, Y. D., Boatner, L. A., and Budai, J. D., Mater. Sci. Eng. R Rep. R 40, 137 (2003).Google Scholar
[3] Chen, X., Na, M., Cheon, M., Wang, S., Luo, H., McCombe, B. D., Liu, X., Sasaki, Y., Wojtowicz, T., Furdyna, J. K., et al. , Appl. Phys. Lett. 81, 511 (2002).Google Scholar
[4] Tsui, F., He, L., Ma, L., Tkachuk, A., Chu, Y. S., Nakajima, K., and Chikyow, T., Phys. Rev. Lett. 91, 177203 (2003).Google Scholar
[5] Park, Y. D., Hanbicki, A. T., Erwin, S. C., Hellberg, C. S., Sullivan, J. M., Mattson, J. E., Ambrose, T. F., Wilson, A., Spanos, G., and Jonker, B. T., Science 295, 651 (2002).Google Scholar
[6] Cho, S., Choi, S., Hong, S. C., Kim, Y., Ketterson, J. B., Kim, B.-J., Kim, Y. C., and Jung, J.-H., Phys. Rev. B 66, 033303 (2002).Google Scholar
[7] Dietl, T., Ohno, H., Matsukura, F., Cibert, J., and Ferrand, D., Science 287, 1019 (2000).Google Scholar
[8] Berciu, M. and Bhatt, R. N., Phys. Rev. Lett. 87, 107203 (2001).Google Scholar
[9] Wellmann, P. J., Garcia, J. M., Feng, J. L., and Petro, P. M., Appl. Phys. Lett. 71, 2532 (1997).Google Scholar
[10] Park, Y. D., Wilson, A., Hanbicki, A. T., Mattson, J. E., Ambrose, T., Spanos, G., and Tonker, B. T., Appl. Phys. Lett. 78, 2739 (2001).Google Scholar
[11] Theodoropoulou, N., Hebard, A. F., Overberg, M. E., Abernathy, C. R., and Pearton, S. J., Phys. Rev. Lett. 89, 107203 (2002).Google Scholar
[12] Hebard, A. F., Rairigh, R. P., Kelly, J. G., Pearton, S. J., Abernathy, C. R., Chu, S. N. G., and Wilson, R. G., J. Phys. D; Appl. Phys. (UK) 37, 511 (2004).Google Scholar
[13] Williams, J. S., Mater. Sci. Eng. A A253, 8 (1998).Google Scholar
[14] Kucheyev, S. O., Williams, J. S., and Pearton, S. J., Mater. Sci. Eng. R Rep. R 33, 51 (2001).Google Scholar
[15] Serres, A., Respaud, M., Benassayag, G., Armand, C., Pesant, J. C., Mari, A., Liental-Weber, Z., and Claverie, A., Physica E 17, 371 (2003).Google Scholar
[16] Shi, J., Kikkawa, J. M., Awschalom, D. D., Medeiros-Ribeiro, G., Petro, P. M., and Babcock, K., J. Appl. Phys. 79, 5296 (1996).Google Scholar
[17] Chen, C., Cai, M., Wang, X., Xu, S., Zhang, M., Ding, X., and Sun, Y., J. Appl. Phys. 87, 5636 (2000).Google Scholar
[18] Theodoropoulou, N., Hebard, A. F., Chu, S. N. G., Overberg, M. E., Abernathy, C. R., Pearton, S. J., Wilson, R. G., and Zavada, J. M., J. Appl. Phys. 91, 7499 (2002).Google Scholar
[19] Overberg, M. E., Gila, B. P., Thaler, G. T., Abernathy, C. R., Pearton, S. J., Theodoropoulou, N. A., McCarthy, K. T., Arnason, S. B., Hebard, A. F., Chu, S. N. G., et al. , J. Vac. Sci. Technol. B 20, 969 (2002).Google Scholar
[20] Woodbury, H. H. and Ludwig, G. W., Phys. Rev. 117, 102 (1960).Google Scholar
[21] Bolduc, M., Awo-Aouda, C., Stollenwerk, A., Huang, M. B., Ramos, F. G., Agnello, G., and LaBella, V. P., Phys. Rev. B 71, 033302 (2005).Google Scholar
[22] Bolduc, M., Awo-Aouda, C., Stollenwerk, A., Huang, M. B., Ramos, F., and LaBella, V. P., Nucl. Instrum. Methods Phys. Res. B0, (in press) (2005).Google Scholar
[23] Liu, L., Chena, N., Songa, S., Yina, Z., Yanga, F., Chaia, C., Yanga, S., and Liua, Z., J. Cryst. Growth 273, 458 (2005).Google Scholar
[24] Bolduc, M., Awo-Aouda, C., Stollenwerk, A., Huang, M. B., Ramos, F., Agnello, G., and LaBella, V. P., Mater. Res. Soc. Symp. Proc. 853E, 4 (2005).Google Scholar
[25] Bolduc, M., C. Awo-A ouda, Ramos, F., and LaBella, V. P., J. Vac. Sci. Technol. B 00, (submitted 9/2005) (2006).Google Scholar
[26] Awo-Aouda, C., Bolduc, M., Huang, M. B., Ramos, F., Dunn, K. A., Thiel, B., Agnello, G., and LaBella, V. P., J. Vac. Sci. Technol. B 00, (submitted 9/2005) (2006).Google Scholar
[27] Kwon, D., Kim, H. K., Kim, J. H., Ihm, Y. E., Kim, D., Kim, H., Baek, J. S., Kim, C. S., and Choo, W. K., J. Magn. Magn. Mater. 282, 240 (2004).Google Scholar
[28] Sulpice, A., Gottlieb, U., ronte, M. A, and Laborde, O., J. Magn. Magn. Mater. 272–276, 519 (2004).Google Scholar
[29] Gottlieb, U., Sulpice, A., Lambert-Andron, B., and Laborde, O., J. Alloys Compounds 361, 13 (2003).Google Scholar
[30] Yamada, M., Goto, T., and Kanomata, T., J. Alloys Compounds 364, 37 (2004).Google Scholar
[31] Bader, R. and Kalbitzer, S., Appl. Phys. Lett. 16, 13 (1970).Google Scholar
[32] Sadana, D. K., Norcott, M. H., Wilson, R. G., and Dahmen, U., Appl. Phys. Lett. 49, 1169 (1986).Google Scholar
[33] Wilson, R. G., Jamba, D. M., Sadana, D. K., and Hopkins, C. G., J. Appl. Phys. 61, 1355 (1987).Google Scholar
[34] Lietoila, A., Gibbons, J. F., Magee, T. J., Peng, J., and Hong, J. D., Appl. Phys. Lett. 35, 532 (1979).Google Scholar
[35] Francois-Saint-Cyr, H., Anoshkina, E., Stevie, F., Chow, L., Richardson, K., and Zhou, D., J. Vac. Sci. Technol. B 19, 1769 (2001).Google Scholar
[36] Lam, N. Q., Okamoto, P. R., and Johnson, R. A., J. Nuc. Mat. 78, 408 (1978).Google Scholar
[37] Bernardini, F., Picozzi, S., and Continenza, A., Appl. Phys. Lett. 84, 2289 (2004).Google Scholar