Hostname: page-component-78c5997874-fbnjt Total loading time: 0 Render date: 2024-11-10T09:42:28.025Z Has data issue: false hasContentIssue false
  • English
  • Français

Reduction of Misfit Dislocation Density in Finite Lateral Size Sil-xGex Films Grown by Selective Epitaxy

Published online by Cambridge University Press:  25 February 2011

L. Vescan ,
T. Stoica ,
C. Dieker  and
H. LÜth
L. Vescan
Affiliation:
Inst. für Schicht und fonentechnik, Forschungszentrum Jülich, 5170-Jülich, Germany
T. Stoica
Affiliation:
Inst. of Physics and Technology of Materials, POB MG7, Bucharest, Romania
C. Dieker
Affiliation:
Inst. für Schicht und fonentechnik, Forschungszentrum Jülich, 5170-Jülich, Germany
H. LÜth
Affiliation:
Inst. für Schicht und fonentechnik, Forschungszentrum Jülich, 5170-Jülich, Germany
Get access

Abstract

In Si0.88Ge0.12/Si strained layers misfit dislocations formed during growth in small pads are generated at a significantly higher critical thickness than on extended areas, while pads of lateral size of 10 μm or smaller show no evidence of misfit dislocations at all. The SiGe layers investigated were selectively grown on patterned substrates with pad sizes from 2 μm to 1 cm. An elastic relaxation model was used to calculate the pad size dependence of the critical thickness. The main hypothesis of the model is that the density of misfit dislocations is solely affected by the elastic relaxation at the edges of small epitaxial areas. This equilibrium model is able to explain the observed absence of misfit dislocations on small pads, however it predicts a critical thickness for finite sizes much lower than the observed one.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 298: Symposium B – Silicon-Based Optoelectronic Materials , 1993 , 45
Copyright
Copyright © Materials Research Society 1993

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Fitzgerald, E.A., Pettit, G.P., Proano, R.E. and Ast, D.G., J. Appl. Phys. 65, 2220 (1989).Google Scholar
[2] Noble, D.B., Hoyt, J.L., King, C.A. and Gibbons, J.F., Appl. Phys.Lett. 56, 51 (1990).Google Scholar
[3] Hull, R., Bean, J.C., Higashi, G.S., Green, M.L., Peticolas, L., Bahnck, D. and Brasen, D., Appl. Phys. Lett. 60, 1468 (1992).Google Scholar
[4] Vescan, L., Jtiger, W., Dieker, C., Schmidt, K., Hartmann, A. and Ltith, H., in Mechanism of Heteroepitaxial Growth, edited by Chrisholm, M.F., Garrison, B.J., Hull, R. and Schowalter, L.J. (Mater. Res. Soc. Proc. 263, Pittsburgh, PA, 1992), pp. 23–28.Google Scholar
[5] Dodson, B.W. and Tsao, J.Y., Appl. Phys. Lett. 51, 1325 (1987).Google Scholar
[6] LeGoues, F.K., Eberl, K. and Iyer, S.S., Appl. Phys. Lett. 60, 2862 (1992).Google Scholar
[7] Stoica, T. and Vescan, L., submitted to J. Cryst. Growth.Google Scholar
[8] Luryi, S. and Suhir, E., Appl. Phys. Lett. 49, 140 (1986).Google Scholar
[9] Matthews, J.W., Mader, S. and Light, T.B., J. Appl. Phys. 41, 3800 (1979).Google Scholar