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Refractory Metals Growth on MBE GaAs

Published online by Cambridge University Press:  22 February 2011

J. Bloch  and
M. Heiblum
J. Bloch
Affiliation:
IBM Thomas J. Watson Research Center, Yorktown Heights, NY 10598
M. Heiblum
Affiliation:
IBM Thomas J. Watson Research Center, Yorktown Heights, NY 10598
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Abstract

Nolybenum and tungsten metals have been grown on an MBE grown (100)GaAs at various substrate temperatures. RHEED technique was used in situ to analyse the crystalline structure and the growth mechanism of the mechanism of the thin metal films. It was found that Mo epilayers can be grown on the (100) GaAs at temperatures between 150–400°C. The epitaxal arrangement is (111)Mo || (100)GaAs with [011]Mo || [011] GaAs. Tungsten films are not growing epitaxially under similar experimental conditions.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 48: Symposium E – Applied Materials Characterization , 1985 , 13
Copyright
Copyright © Materials Research Society 1985

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References

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