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Relationship of Field Emission Characteristics on Process Gas Nitrogen Content in Nitrogen Doped Diamond Films

Published online by Cambridge University Press:  10 February 2011

A.T. Sowers ,
B.L. Ward  and
R.J. Nemanich
A.T. Sowers
Affiliation:
Department of Physics, North Carolina State University, Raleigh, NC 27695-8202
B.L. Ward
Affiliation:
Department of Physics, North Carolina State University, Raleigh, NC 27695-8202
R.J. Nemanich
Affiliation:
Department of Physics, North Carolina State University, Raleigh, NC 27695-8202
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Abstract

This study explores the field emission properties of nitrogen doped diamond grown by microwave plasma CVD. Several diamond samples were grown on silicon under varying conditions. With certain process parameters, films can be grown which exhibit photoluminescence bands at 1.945eV and 2.154eV that are attributed to single substitutional nitrogen. Field emission characteristics were measured in ultrahigh vacuum with a position variable anode. For samples grown with gas phase [N]/[C] ratios less than 16, damage from micro-arcs occurred during the field emission measurements. Samples grown at higher [N]/[C] content could be measured without damage. These measurements indicate relatively high threshold fields (>100V/µm) for electron emission. From the data, two possible field emission mechanisms are presented. Conducting defect states in the bandgap of diamond may provide a source of electrons to the emitting diamond surface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 508: Symposium B – Flat Panel Display Materials - 1998 , January 1998 , 191
Copyright
Copyright © Materials Research Society 1998

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