Hostname: page-component-745bb68f8f-5r2nc Total loading time: 0 Render date: 2025-01-30T00:00:38.454Z Has data issue: false hasContentIssue false
  • English
  • Français

Relaxation Measurements of the Persistent Photoconductivity in Sulfur-Doped a-Si:H.

Published online by Cambridge University Press:  10 February 2011

D. Quicker  and
J. Kakalios
D. Quicker
Affiliation:
School of Physics and Astronomy, University of Minnesota, Minneapolis MN 55455
J. Kakalios
Affiliation:
School of Physics and Astronomy, University of Minnesota, Minneapolis MN 55455
Get access

Abstract

The slow relaxation of the persistent photoconductivity (PPC) effect in sulfur-doped hydrogenated amorphous silicon (a-Si:H) has been measured as a function of temperature and illumination time. The relaxation is found to be thermally activated, with an activation energy which varies with sulfur concentration, while illuminating the film for a longer time leads to a longer relaxation time. A correlation is observed between changes of the photoconductivity during illumination and the magnitude of the PPC effect following illumination. These effects are also observed in compensated a-Si:H, suggesting that the mechanism for the PPC effect is the same in both sulfur-doped a-Si:H and compensated a-Si:H. The presence of donor and compensating acceptor states in sulfur-doped a-Si:H could arise from valence alternation pair sulfur atom defects.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 420: Symposium A – Amorphous Silicon Technology-1996 , 1996 , 611
Copyright
Copyright © Materials Research Society 1996

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Staebler, D.L. and Wronski, C.R., Appl. Phys. Lett. 31, 292 (1977).Google Scholar
2. Mell, H. and Beyer, W., J. Non-Cryst. Solids 59–60, 405 (1983).Google Scholar
3. Kakalios, J. and Fritzsche, H., Phys. Rev. Lett. 53, 1602 (1984).Google Scholar
4. Wang, S.L., Viner, J.M., Anani, M., and Taylor, P.C., J. Non-Cryst. Solids 164–166, 251 (1993).Google Scholar
5. Kakalios, J., Street, R.A., and Jackson, W.B., Phys. Rev. Lett. 59, 1037 (1987).Google Scholar
6. Movaghar, B., J. Phys. C 13, 4915 (1980); J. Orenstein, M.A. Kastner, and V. Vaninov, Phil. Mag. B 46, 23 (1982); H. Scher, Jour. de Phys. (Paris) C 4–42, 547 (1981).Google Scholar
7. Street, R.A., Hack, M., and Jackson, W.B., Phys. Rev. B 37, 4209 (1988).Google Scholar
8. Wang, S.L. and Taylor, P.C., Solid State Comm. 95, 361 (1995).Google Scholar
9. Pensl, G., Roos, G., Holm, C., Sirtl, E., and Johnson, N.M., Appl. Phys. Lett. 51, 451 (1987).Google Scholar
10. Hundhausen, M. and Ley, L., Phys. Rev. B 32, 6655 (1985); J. Kakalios, Phil. Mag. B 54, 199 (1986).Google Scholar
11. Kakalios, J. and Street, R.A., in Disordered Semiconductors, edited by M.A., Kastner, G.A., Thomas, and S.R., Ovshinsky (Plenum, New York, 1987), p. 529; B. Everitt and J. Kakalios, Phys. Rev. B 43, 6820 (1991).Google Scholar
12. Hamed, A. and Fritzsche, H., Phil. Mag. Lett. 60, 171 (1989).Google Scholar
13. Elliot, S.R., Physics of Amorphous Materials (Longman Scientific & Technical, Essex, 1983), chapter 6 and references cited therein.Google Scholar