Hostname: page-component-78c5997874-ndw9j Total loading time: 0 Render date: 2024-11-10T09:31:56.843Z Has data issue: false hasContentIssue false
  • English
  • Français

Reliability Detection of Process-Induced Metallization Defects in GaAs Devices

Published online by Cambridge University Press:  18 May 2015

Steve H. Kilgore
Steve H. Kilgore*
Affiliation:
Technology Reliability & Quality, Freescale Semiconductor, Inc., Tempe, AZ 85284, USA
Get access

Abstract

Process-induced defects in electroplated Au interconnect metallization on GaAs devices were detected during the course of reliability testing. Abnormally high lognormal sigma values (σ > 0.7) indicated the existence of a bi-modal failure mechanism. A distinct early lifetime failure mode was observed along with the intrinsic electromigration metallization wear-out failure mode. Physical characterization of the electroplated Au film revealed as-deposited nanoscale voids. Elimination of these voids through process improvement as well as suggested mechanisms for the early failures are discussed.

Keywords

metallic conductordefectselectromigration
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1792: Symposium CC/FF – Defects and Materials Issues in Semiconductors―Relationship to Optoelectronic Properties and Device Reliability , 2015 , mrss15-2132530
Copyright
Copyright © Materials Research Society 2015 

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

Blech, I. A. and Rosenberg, R., “On the direction of electromigration in gold thin films,” Journal of Applied Physics, vol. 46, pp. 579–583, (1975).CrossRefGoogle Scholar
Hummel, R. E. and Breitling, H. M., “On the direction of electromigration in thin silver, gold, and copper films,” Applied Physics Letters, vol. 18, pp. 373–375, (1971).CrossRefGoogle Scholar
Hummel, R. E., Matts-Goho, S., and DeHoff, R. T., “New insights on the reversal of the site of electromigration failure in gold films doped with alkali,” Journal of Applied Physics, vol. 54, pp. 2855–2856, (1983).CrossRefGoogle Scholar
Kilgore, S., “Electromigration Reliability of Passivated Gold Interconnects for GaAs Devices,” ECS Transactions, vol. 61, pp. 57–63, September 22, 2014 (2014).CrossRefGoogle Scholar
Kilgore, S., et al. , “Electromigration of Electroplated Gold Interconnects,” Materials Research Society Symposium Proceedings, vol. 863, (2005).Google Scholar