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Reliable semi-transparent pentacene thin-film transistors with polymer gate dielectric layers cured at an optimum temperature

Published online by Cambridge University Press:  26 February 2011

Do Kyung Hwang ,
Ji Hoon Park ,
Jeong Min Choi ,
Jiyoul Lee ,
Seong Hun Jeong ,
Eugene Kim ,
Jae Hoon Kim  and
Seongil Im
Do Kyung Hwang
Affiliation:
triple0505@yonsei.ac.kr, Yonsei University, Insitute of Physics and Applied Physics, 134 Shinchon-dong, Seoul, Sudaemoon-ku, 120-749, Korea, Republic of, 82-2-2123-4928, 82-2-392-1592
Ji Hoon Park
Affiliation:
eddy-park@hanmail.net, Hongik University, Department of Information and Display
Jeong Min Choi
Affiliation:
borin99@yonsei.ac.kr, Yonsei University, Institute of Physics and Applied Physics, Korea, Republic of
Jiyoul Lee
Affiliation:
wiseheat@yonsei.ac.kr, Yonsei University, Institute of Physics and Applied Physics, Korea, Republic of
Seong Hun Jeong
Affiliation:
ifi98@hotmail.com, Yonsei University, Institute of Physics and Applied Physics, Korea, Republic of
Eugene Kim
Affiliation:
ekim@hongik.ac.kr, Hongik University, Department of Information and Display, Korea, Republic of
Jae Hoon Kim
Affiliation:
jaehkim@phya.yonsei.ac.kr, Yonsei University, Institute of Physics and Applied Physics, Korea, Republic of
Seongil Im
Affiliation:
semicon@yonsei.ac.kr, Yonsei University, Institute of Physics and Applied Physics, Korea, Republic of
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Abstract

We report on the insulator-charging-effects of poly-4-vinylphenol (PVP) gate dielectric on the reliabilities of pentacene thin-film transistors (TFTs). Our PVP films were prepared by spin coating and curing at various temperatures (155, 175, and 200 °C). Evaluated using Au/PVP/p+−Si structures, the dielectric strength of PVP films cured at 175 °C was superior to those of the other PVP films cured at different temperatures. Although saturation current and field mobility (∼0.13 cm2/Vs) obtained from a TFT with PVP film cured at 200 °C appeared higher than those (∼0.07 cm2/Vs) from the device with 175 °C-cured polymer film, the TFT prepared at 200 °C revealed a low on/off current ratio of less than 104 due to its high off-state current and also unreliable saturation behavior under repetitive gate voltage sweep. The unreliable behavior is due to the dielectric-charging caused by gate-electron-injection. We thus conclude that there are some optimal PVP-curing conditions to improve the reliability of pentacene TFT.

Keywords

devicesdielectric propertiespolymer
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 905: Symposium DD – Materials for Transparent Electronics , 2005 , 0905-DD05-15
Copyright
Copyright © Materials Research Society 2006

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References

1 Klauk, H., Halik, M., Zschieschang, U., Schmid, G., and Radlik, W., J. Appl. Phys, 92, 5259 (2002).Google Scholar
2 Halik, M., Klauk, H., Zschieschang, U., Schmid, G., Radlik, W., and Weber, W., Adv. Mater. 23, 1717 (2002).Google Scholar
3 Zilker, S. J., Detcheverry, C., Cantatore, E., and de Leeuw, D. M., Appl. Phys. Lett. 79, 1124 (2001).Google Scholar
4 Bae, H. S., Choi, C. M., Kim, J. H., and Im, S., J. Appl. Phys. 97, 076104 (2005).Google Scholar
5 Choi, J. M., Hwang, D. K., Kim, J. H., and Im, S., Appl. Phys. Lett. 86, 123505 (2005).Google Scholar
6 Muller, R. S., Kamins, T. I., and Chan, M., Device Electronics for integrated circuits, 3rd ed. (Wiley, New York, 2002), pp. 431–433.Google Scholar