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Retention Studies on Ferroelectric Media for High Data Storage Application

Published online by Cambridge University Press:  10 February 2011

I. K. Yoo ,
B. M. Kim ,
D. S. Kim  and
S. J. Park
I. K. Yoo
Affiliation:
Electronic Materials Lab., Materials Sector, Samsung Advanced Institute of Technology, P.O. Box 111, Suwon, Kyongki, 440-600, Korea, inyoo@saitgw.samsung.co.kr
B. M. Kim
Affiliation:
Electronic Materials Lab., Materials Sector, Samsung Advanced Institute of Technology, P.O. Box 111, Suwon, Kyongki, 440-600, Korea, inyoo@saitgw.samsung.co.kr
D. S. Kim
Affiliation:
Electronic Materials Lab., Materials Sector, Samsung Advanced Institute of Technology, P.O. Box 111, Suwon, Kyongki, 440-600, Korea, inyoo@saitgw.samsung.co.kr
S. J. Park
Affiliation:
Electronic Materials Lab., Materials Sector, Samsung Advanced Institute of Technology, P.O. Box 111, Suwon, Kyongki, 440-600, Korea, inyoo@saitgw.samsung.co.kr
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Abstract

Data retention may be affected by depolarization, domain stabilization (ageing or imprint), and fuzzy electric field among neighboring bits in relation to microstructures of ferroelectric media. In this paper, the smearing effect due to electric field between two adjacent bits was demonstrated. In order to minimize the smearing effect, ferroelectric media with the top electrode is proposed by which fuzzy electric field can be screened by bound charges in the electrode. Bit on electrode (BOE) technique was suggested for “Write” (local polarization) and “Read” on ferroelectric media with the top electrode (ferroelectric capacitor). It is noticed that a highly sensitive device such as single electron transistor is indispensable for measuring potential variation in the top electrode of the ferroelectric capacitor media.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 493: Symposium U – Ferroelectric Thin Film VI , 1997 , 299
Copyright
Copyright © Materials Research Society 1998

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References

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