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Reversible Degradation of Photoluminescence in Si/SiGe Three Dimensional Nanostructures

Published online by Cambridge University Press:  12 April 2012

Nikhil Modi ,
Leonid Tsybeskov ,
David J. Lockwood ,
Xiao Z. Wu  and
Jean Marc Baribeau
Nikhil Modi
Affiliation:
Department of Electrical and Computer Engineering, New Jersey Institute of Technology, 106 Warren St, Newark, NJ 07102, U.S.A.
Leonid Tsybeskov
Affiliation:
Department of Electrical and Computer Engineering, New Jersey Institute of Technology, 106 Warren St, Newark, NJ 07102, U.S.A.
David J. Lockwood
Affiliation:
Institute for Microstructural Sciences, National Research Council, Ottawa, ON K1A 0R6, Canada
Xiao Z. Wu
Affiliation:
Institute for Microstructural Sciences, National Research Council, Ottawa, ON K1A 0R6, Canada
Jean Marc Baribeau
Affiliation:
Institute for Microstructural Sciences, National Research Council, Ottawa, ON K1A 0R6, Canada
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Abstract

We report the degradation of low temperature photoluminescence (PL) from Si/SiGe three-dimensional cluster morphology nanostructures under continuous photoexcitation. The PL intensity initially decreases slowly for about 15 minutes, and then decreases rapidly, until only ∼ 10% of the original PL intensity remains. A complete recovery of the PL requires restoring the sample temperature to ∼ 300K. We propose that a slow accumulation of charge in SiGe clusters enhances the rate of Auger recombination and results in the observed PL degradation.

Keywords

SiGefatigue
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1409: Symposium CC – Functional Semiconductor Nanocrystals and Metal-Hybrid Structures , 2012 , mrsf11-1409-cc13-08
Copyright
Copyright © Materials Research Society 2012

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References

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