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Rheed Study of Strain Relaxation in Epitaxial Cds and Sn Overlayers

Published online by Cambridge University Press:  21 February 2011

David W. Niles  and
Hartmut Höchst
David W. Niles
Affiliation:
Synchrotron Radiation Center, University of Wisconsin-Madison, 3731 Schneider Drive, Stoughton, WI 53589
Hartmut Höchst
Affiliation:
Synchrotron Radiation Center, University of Wisconsin-Madison, 3731 Schneider Drive, Stoughton, WI 53589
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Abstract

The relaxation of strain in epitaxial overlayers is studied through an analysis of RHEED patterns. From the separation of the RHEED reflections, we determine the in-plane lattice constants for α-Sn/Cd0.8Zn0.2Te(100), CdS/GaAs(100), and CdS/CdTe(100) heterostructures. The discussion focuses on the critical thickness of the overlayers and the relaxation of the inplane lattice constant (a∥) of epitaxial films which exceed the critical thickness. Predictions based on Matthews and Blakeslee's mechanical equilibrium theory show reasonable agreement with our experimental findings, indicating that the metastability of the epitaxial overlayers does not cause a significant reduction in the critical film thickness.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 208: Symposium J – Advances in Surface and Thin Film Diffraction , 1990 , 243
Copyright
Copyright © Materials Research Society 1991

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References

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