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The Role of Carbon in Amorphous Silicon Nip Photodiode Sensors

Published online by Cambridge University Press:  25 February 2011

R. L. Weisfield  and
C. C. Tsai
R. L. Weisfield
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, CA 94034
C. C. Tsai
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, CA 94034
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Abstract

We have been investigating the dark current and quantum efficiency of nip and pin photodiodes for document scanning applications. Alloying the top doped layer with carbon or making it microcrystalline was found to enhance the spectral response without causing significant deleterious effects to dark current. We also observed lower dark currents in both pin and nip(μc-Si:C:H) sensors compared to nip(a-Si:C:H) sensors, which we attribute to a more graded p-i interface in the former devices.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 192: Symposium O – Amorphous Silicon Technology - 1990 , 1990 , 423
Copyright
Copyright © Materials Research Society 1990

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References

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