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The Role of H in the Growth Mechanism of PECVD a-Si:H

Published online by Cambridge University Press:  15 February 2011

M.C.M. Van de Sanden ,
W.M.M. Kessels ,
A.H.M. Smets ,
B.A. Korevaar ,
R.J. Severens  and
D.C. Schram
M.C.M. Van de Sanden
Affiliation:
Eindhoven University of Technology, Department of Applied Physics, P.O.Box 513, 5600 MB, Eindhoven, Netherlands, m.c.m.v.d.sanden@phys.tue.nl
W.M.M. Kessels
Affiliation:
Eindhoven University of Technology, Department of Applied Physics, P.O.Box 513, 5600 MB, Eindhoven, Netherlands
A.H.M. Smets
Affiliation:
Eindhoven University of Technology, Department of Applied Physics, P.O.Box 513, 5600 MB, Eindhoven, Netherlands
B.A. Korevaar
Affiliation:
Eindhoven University of Technology, Department of Applied Physics, P.O.Box 513, 5600 MB, Eindhoven, Netherlands
R.J. Severens
Affiliation:
AKZO-NOBEL Central Research, P.O.Box 9300, 6800 SB, Arnhem, Netherlands
D.C. Schram
Affiliation:
Eindhoven University of Technology, Department of Applied Physics, P.O.Box 513, 5600 MB, Eindhoven, Netherlands
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Abstract

This paper describes an extension of the silyl radical based kinetic growth model by atomic hydrogen induced surface hydrogen abstraction processes. It is shown that by including this direct abstraction process several problems of the SiH 3 based model are resolved. The defect density can be predicted with the proper temperature dependence and order of magnitude. The implications for high rate deposition of a-Si:H are discussed

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 557: Symposium A – Amorphous and Heterogeneous Silicon Thin Films—Fundamentals to Devices—1999 , 1999 , 13
Copyright
Copyright © Materials Research Society 1999

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References

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