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The Role of Ion Mass on End-of-Range Damage in Shallow Preamorphizing Silicon

Published online by Cambridge University Press:  21 March 2011

Mark H. Clark ,
Kevin S. Jones ,
Tony E. Haynes ,
Charles J. Barbour ,
Kenneth G. Minor  and
Ebrahim Andideh
Mark H. Clark
Affiliation:
University of Florida, Dept of Materials Science and Engineering, Gainesville, FL 32611-6130, U.S.A.
Kevin S. Jones
Affiliation:
University of Florida, Dept of Materials Science and Engineering, Gainesville, FL 32611-6130, U.S.A.
Tony E. Haynes
Affiliation:
Oak Ridge National Laboratory, Oak Ridge, TN, 37831-6048, U.S.A.
Charles J. Barbour
Affiliation:
Sandia National Laboratories, Albuquerque, NM, 87185-1056, U.S.A.
Kenneth G. Minor
Affiliation:
Sandia National Laboratories, Albuquerque, NM, 87185-1056, U.S.A.
Ebrahim Andideh
Affiliation:
Intel Corporation, Portland, OR, 97124, U.S.A.
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Abstract

Preamorphization is commonly used to form shallow junction in silicon CMOS devices. The purposeof this experiment was to study the effect of the preamorphizing species' mass on the interstitial concentration at the end-of-range (EOR). Isovalent species of Si, Ge, Sn and Pb were compared. Silicon wafers with a buried boron marker layer (4700 Å deep) were amorphized using implants of 22 keV 28Si+, 32 keV73Ge+, 40 keV 119Sn+ or 45 keV 207Pb+, which resulted in similar amorphous layer depths. All species were implanted at a dose of 5×1014 /cm2. Cross-sectional transmission electron microscopy (XTEM) was used tomeasure amorphous layer depths (approximately 400 Å). Post-implantation anneals were performed at 750 °C for 15 minutes. Plan-view transmission electron microscopy (PTEM) was used to observe and quantify the EOR defect population upon annealing. Secondary ion mass spectrometry (SIMS) was used to monitor the transient enhanced diffusion (TED) of the buried boron marker layer resulting from the EOR damage introduced by the amorphizing implants. Based upon the SIMS results Florida Object Oriented Process Simulator (FLOOPS) calculated the resulting time average diffusivity enhancements. Results showed that increasing the ion mass over a significant range (28 to 207 AMU) not only affects the quantity and type of damage that occurs at the EOR, but results in a reduced diffusivity enhancement.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 669: Symposium J – Si Front-End Processing–Physics and Technology of Dopant-Defect Interactions III , 2001 , J3.6
Copyright
Copyright © Materials Research Society 2001

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References

REFERENCES

1. SIA, “International Technology Roadmap for Semiconductors,” Semiconductor Industry Assoc., San Jose, CA 1999.Google Scholar
2. Liu, T. M. and Oldham, W. G., “Channeling Effect of Low Energy Boron Implant in (100) Silicon,” IEEE Electron Device Lett., vol. EDL–4, pp. 59–62, 1983.Google Scholar
3. Simonton, R. B., “The Use of Self-implanted Amorphized Silicon Substrates to Eliminate Channeling Effects in Low Energy Boron Implants,” Nucl. Inst. and Methods in Phys. Res. B, vol. 21, pp. 490–492, 1987.Google Scholar
4. Delfino, M., Sadana, D. k., and Morgan, A. E., “Shallow Junction Formation by Preamorphization with Tin Implantation,” Appl. Phys. Lett., vol. 49, pp. 575–577, 1986.Google Scholar
5. Hong, S. N., Ruggles, G. A., Wortman, J. J., and Ozturk, M. C., “Material and Electrical Properties of Ultra-Shallow p+-n Junctions formed by Low-Energy Ion Implantation and Rapid Thermal Annealing,” IEEE Transactions on Electron Devices, vol. 38, pp. 476–486, 1991.Google Scholar
6. Eaglesham, D., Stolk, P., Cheng, J.-Y., Gossmann, H.-J., Haynes, T., and Poate, J., “{311} Defects in Ion-implanted Si: the cause of Transient Diffusion and a Mechanism for Dislocated Formation,” presented at Microsc. Semicond. Mater. Conf., Oxford, 1995.Google Scholar
7. Claverie, A., Laanab, L., Bonafos, C., and Bergaud, C., “On the Relation Between Dopant Anomalous Diffusion in Si and End-of-Range Defects,” Nuclear Instruments and Methods in Physics Research B, vol. 96, pp. 202–209, 1995.Google Scholar
8. Jones, K. S., Zhang, L. H., Krishnamoorthy, V., Law, M., Simmons, D. S., Chi, P., Rubin, L., and Elliman, R. G., “Diffusion of Ion Implanted Boron in Preamorphized Silicon,” Appl. Phys. Lett., vol. 68, pp. 2672–2674, 1996.Google Scholar
9. Tsai, M. Y. and Streetman, B. G., “Recrystallization of Implanted Amorphous Silicon Layers. I. Electrical Properties of Silicon Implanted with BF2+ or Si+ + B+,” J. Appl. Phys., vol. 50, pp. 183–187, 1979.Google Scholar
10. Ajmera, A. C. and Rozgonyi, G. A., “Elimination of End-of-Range and Mask Edge Lateral Damage in Ge+ Preamorphized, B+ Implanted Si,” Appl. Phys. Lett., vol. 49, pp. 1269–1271, 1986.Google Scholar
11. Chao, H. S., Crowder, S. W., Griffin, P. B., and Plummer, J. D., “Species and Dose Dependence of Ion Implantation Damage Induced Transient Enhanced Diffusion,” J. Appl. Phys., vol. 79, pp. 2352–2363, 1996.Google Scholar
12. Gossmann, H.-J., Gilmer, G. H., Rafferty, C. S., Unterwald, F. C., Boone, T., and Poate, J. M., “Determination of Si Self-interstitial Diffusivities fro the Oxidation-enhanced Diffusion in B Doping-superlattices: The Influence of the Marker Layer,” J. Appl. Phys., vol. 77, pp. 1948–1951, 1995.Google Scholar
13. Ziegler, J. F., Biersack, J. P., and Littmark, U., The Stopping and Range of Ions in Solids. New York: Pergamon Press, 1999.Google Scholar
14. Bharatan, S., “Transmission Electron Microscopy (TEM),” in Material and Process Characterization of Ion Implantation, Current, M. I. and Yarling, C. B., Eds.: Ion Beam Press, 1997, pp. 224–243.Google Scholar
15. Law, M. E., Gilmer, G. H., and Jaraiz, M., “Simulation of Defects and Diffusion Phenomena in Silicon,” in MRS Bulletin, 2000, pp. 45–50.Google Scholar
16. Olesinski, R. W. and Abbaschian, G. J., “The Si-Pb Binary,” Metal Progress, pp. 55,57, 1985.Google Scholar
17. Packan, P. A. and Plummer, J. D., “Transient Diffusion of Low-concentration B Due to 29Si Implantation Damage,” Appl. Phys. Lett., vol. 56, pp. 1787–1789, 1990.Google Scholar