Hostname: page-component-78c5997874-fbnjt Total loading time: 0 Render date: 2024-11-14T06:19:13.820Z Has data issue: false hasContentIssue false
  • English
  • Français

The Role of Si and Sb in the Si-Sb-Te Phase-change Material

Published online by Cambridge University Press:  09 March 2011

Liangcai Wu ,
Xilin Zhou ,
Zhitang Song ,
Henan Ni ,
Feng Rao ,
Kun Ren ,
Cheng Peng ,
Sannian Song ,
Ting Zhang  and
Bo Liu
...Show all authors
Liangcai Wu
Affiliation:
State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai 200050, P. R. China
Xilin Zhou
Affiliation:
State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai 200050, P. R. China
Zhitang Song
Affiliation:
State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai 200050, P. R. China
Henan Ni
Affiliation:
State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai 200050, P. R. China
Feng Rao
Affiliation:
State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai 200050, P. R. China
Kun Ren
Affiliation:
State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai 200050, P. R. China
Cheng Peng
Affiliation:
State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai 200050, P. R. China
Sannian Song
Affiliation:
State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai 200050, P. R. China
Ting Zhang
Affiliation:
State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai 200050, P. R. China
Bo Liu
Affiliation:
State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai 200050, P. R. China
Songlin Feng
Affiliation:
State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai 200050, P. R. China
Bomy Chen
Affiliation:
Silicon Storage Technology, Inc., 1171 Sonora Court, Sunnyvale, CA 94086, U. S. A.
Get access

Abstract

Sb-rich Si-Sb-Te phase change materials with different Si contents were proposed and fabricated, and the role of Si and Sb in the Si-Sb-Te alloys was discussed. The resistance-temperature and retention properties of the Sb-rich Si-Sb-Te alloys were studied. Devices based on the Sb-rich Si-Sb-Te alloys were fabricated by a 0.18 μm CMOS technology and device properties were studied by pulsed mode resistance-voltage (R-V) measurements. Experimental results show that the crystallization temperature and data retention ability of the Sb-rich Si-Sb-Te alloys were obviously improved with increasing Si content, but the electrical properties degenerate if too much Si was added. Sb is helpful to promote the crystallization process, but excessive Sb decreases the thermal stability. So, in order to obtain practicable Sb-rich Si-Sb-Te phase change materials, suitable Si and Sb contents are required to balance the device performances between electrical switching property and thermal stability or data retention ability.

Keywords

electrical propertiesmemorythin film
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1295: Symposium N – Intermetallic-Based Alloys for Structural and Functional Applications , 2011 , mrsf10-1295-n09-08
Copyright
Copyright © Materials Research Society 2011

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Lankhorst, M. H. R., Ketelaars, B. W. S. M. M., and Wolters, R. A. M., Nat. Mater. 4, 347, (2005).Google Scholar
2. http://www.itrs.net/Links/2009ITRS/Home2009.html, International Technology Roadmap for Semiconductors (ITRS), (2009).Google Scholar
3. Wuttig, M., Nat. Mater. 4, 265, (2005).Google Scholar
4. Song, K.-H., Kim, S.-W., Seo, J.-H., and Lee, H.-Y., J. Appl. Phys. 104, 103516 (2008).Google Scholar
5. Lee, T.-Y., Yim, S.-S., Lee, D., Lee, M.-H., Ahn, D.-H., and Kim, K.-B., Appl. Phys. Letts. 89, 163503 (2006).Google Scholar
6. Chong, T. C., Shi, L. P., Zhao, R., Tan, P. K., Li, J. M., Lee, H. K., Miao, X. S., Du, A. Y., and Tung, C. H., Appl. Phys. Letts. 88, 122114 (2006).Google Scholar
7. Rao, F., Song, Z. T., Gong, Y. F., Wu, L. C., Liu, B., Feng, S. L., and Chen, B., Appl. Phys. Lett. 92, 223507 (2008).Google Scholar
8. Zhang, T., Song, Z. T., Rao, F., Feng, G. M., Liu, B., Feng, S. L., and Chen, B., Jpn. J. App. Phy. 46, L247 (2007).Google Scholar
9. Zhou, X. L., Wu, L. C., Song, Z. T., Rao, F., Liu, B., Yao, D. N., Yin, W. J., Li, J. T., Feng, S. L., and Chen, B., Appl. Phys. Express 2, 091401(2009).Google Scholar
10. Ren, K., Rao, F., Song, Z. T., Wu, L. C., Zhou, X. L., Liu, B., Feng, S. L., Xi, W., and Chen, B., Jpn. J. Appl. Phys. 49, 080212 (2010).Google Scholar
11. Agafonov, V., Rodier, N., Céolin, R., Bellissent, R., Bergman, C., and Gaspard, J. P., Acta Cryst. C47, 1141 (1991).Google Scholar
12. Zhou, X. L., Wu, L. C., Song, Z. T., Rao, F., Liu, B., Yao, D. N., Yin, W. J., Feng, S. L., and Chen, B., Appl. Phys. A (2010) (in press).Google Scholar