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Role of the Collecting Resistive Layer on the Static Characteristics of 2D a-Si:H thin Film Position Sensitive Detector

Published online by Cambridge University Press:  10 February 2011

E. Fortunato  and
R. Martins
E. Fortunato
Affiliation:
Cenimat, Faculty of Science and Technology of New University of Lisbon and Center of Excellence for Microelectronics and Optoelectronic Processes – CEMOP, Quinta da Torre, 2825 Monte de Caparica, Portugal, ef@uninova.pt
R. Martins
Affiliation:
Cenimat, Faculty of Science and Technology of New University of Lisbon and Center of Excellence for Microelectronics and Optoelectronic Processes – CEMOP, Quinta da Torre, 2825 Monte de Caparica, Portugal, ef@uninova.pt
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Abstract

The aim of this work is to present an analytical model able to interpret the role of the thin collecting resistive layer on the static performances exhibited by 2D amorphous silicon hydrogenated pin thin film position sensitive detectors. In addition, experimental results concerning the device linearity and spatial resolution are presented and checked against the predicted values of the analytical model proposed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 507: Symposium A – Amorphous & Microcrystalline Silicon Technology 1998 , 1998 , 303
Copyright
Copyright © Materials Research Society 1998

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References

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