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Room Temperature CW Operation of GaN-Based Blue Laser Diodes by GaInN/GaN Optical Guiding Layers

Published online by Cambridge University Press:  03 September 2012

Masayoshi Koike ,
Shiro Yamasaki ,
Yuta Tezen ,
Seiji Nagai ,
Sho Iwayama  and
Akira Kojima
Masayoshi Koike
Affiliation:
Optoelectronics, Toyoda Gosei Co., Ltd., Haruhi-cho, Nishikasugai-gun, Aichi 452-8564, JAPAN
Shiro Yamasaki
Affiliation:
Optoelectronics, Toyoda Gosei Co., Ltd., Haruhi-cho, Nishikasugai-gun, Aichi 452-8564, JAPAN
Yuta Tezen
Affiliation:
Optoelectronics, Toyoda Gosei Co., Ltd., Haruhi-cho, Nishikasugai-gun, Aichi 452-8564, JAPAN
Seiji Nagai
Affiliation:
Optoelectronics, Toyoda Gosei Co., Ltd., Haruhi-cho, Nishikasugai-gun, Aichi 452-8564, JAPAN
Sho Iwayama
Affiliation:
Optoelectronics, Toyoda Gosei Co., Ltd., Haruhi-cho, Nishikasugai-gun, Aichi 452-8564, JAPAN
Akira Kojima
Affiliation:
Optoelectronics, Toyoda Gosei Co., Ltd., Haruhi-cho, Nishikasugai-gun, Aichi 452-8564, JAPAN
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Abstract

GaN-based short wavelength laser diodes are the most promising key device for a digital versatile disk. We have been improving the important points of the laser diodes in terms of optical guiding layers, mirror facets. The continuous wave laser irradiation at room temperature could be achieved successfully by reducing the threshold current to 60 mA (4 kA/cm2). We have tried to apply the multi low temperature buffer layers to the laser diodes for the first time to reduce the crystal defects.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 595: Symposium W – GaN and Related Alloys - 1999 , 1999 , F99W1.2
Copyright
Copyright © Materials Research Society 1999

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References

1. Nakamura, S., Senoh, M., Nagahama, S., Iwasa, N., Matsushita, T. and Mukai, T., Proc. 2nd Intern. Symp. On Blue Laser and Light Emitting Diodes, Chiba, Japan, 1998, p.371 (Ohm-sha, Ltd. Tokyo, 1998).Google Scholar
2. Akasaki, I., Amano, H., Sota, S., Sakai, H., T. Tanaka and Koike, M., Jpn. J. Appl. Phys., 34, L1517 (1995).Google Scholar
3. Usui, A., Sunakawa, H., Sakai, A. and Yamaguchi, A. A., Jpn. J. Appl. Phys., 36, L899 (1997).Google Scholar
4. Nakamura, S., Senoh, M., Nagahama, S., Iwasa, N., Yamada, T., Matsushita, T., Kiyoku, H., Sugimoto, Y., Kozaki, T., Umemoto, H., Sano, M., and Chocho, K., Jpn. J. Appl. Phys., 36, L1568 (1997).Google Scholar
5. Zheleva, T. S., Smith, S. A., Thomson, D. B., Gehrke, T., Linthicum, K. J., Rajagopal, P., Carlson, E., Ashmawi, W. M. and Davis, R. F., MRS Internet J. Nitride Semicond. Res., 4S1, G3.38 (1999).Google Scholar
6. Koide, N., Kato, H., Sassa, M., Yamasaki, S., Manabe, K., Hashimoto, M., Amano, H., Hiramatsu, K. and Akasaki, I., J. Cryst. Growth, 115, 639 (1991).Google Scholar
7. Akasaki, I., Amano, H., Murakami, H., Sassa, M., Kato, H. and Manabe, K., J. Cryst. Growth, 128, 379 (1993).Google Scholar
8. Kozawa, T., Kachi, T., Ohwaki, T., Taga, Y., Koide, N. and Koike, M., J. Electrochem. Soc., 143, 1, L17 (1996).Google Scholar
9. Nakamura, S. and Fasol, G., The Blue Laser Diode, P.250 (Springer-Verlag Berlin Heidelberg, 1997).Google Scholar
10. Iwaya, M., Takeuchi, T., Yamaguchi, S., Wetzel, C., Amano, H. and Akasaki, I., Jpn. J. Appl. Phys., 37, L316 (1998).Google Scholar