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Room Temperature Deposition of Highly Transparent n-ZnO on PET and ZnO Semiconductor FET

Published online by Cambridge University Press:  25 October 2012

Alessandro Neri ,
Riccardo Lotti ,
Dmitry Yarmolich ,
Petr Nozar ,
Santiago Quiroga ,
Eugenio Lunedei  and
Carlo Taliani
Alessandro Neri
Affiliation:
Organic Spintronics Srl, Via P. Gobetti 52/3, 40129 Bologna, Italy
Riccardo Lotti
Affiliation:
Organic Spintronics Srl, Via P. Gobetti 52/3, 40129 Bologna, Italy
Dmitry Yarmolich
Affiliation:
Organic Spintronics Srl, Via P. Gobetti 52/3, 40129 Bologna, Italy
Petr Nozar
Affiliation:
Consiglio Nazionale delle Ricerche – Istituto per lo Studio dei Materiali Nanostrutturati (CNR-ISMN), Via P. Gobetti 101, 40129 Bologna, Italy
Santiago Quiroga
Affiliation:
Organic Spintronics Srl, Via P. Gobetti 52/3, 40129 Bologna, Italy
Eugenio Lunedei
Affiliation:
Consiglio Nazionale delle Ricerche – Istituto per lo Studio dei Materiali Nanostrutturati (CNR-ISMN), Via P. Gobetti 101, 40129 Bologna, Italy
Carlo Taliani*
Affiliation:
Organic Spintronics Srl, Via P. Gobetti 52/3, 40129 Bologna, Italy Consiglio Nazionale delle Ricerche – Istituto per lo Studio dei Materiali Nanostrutturati (CNR-ISMN), Via P. Gobetti 101, 40129 Bologna, Italy
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Abstract

In this paper we report on the fabrication of n-doped ZnO and semiconducting n-ZnO at room temperature by a new ablation deposition technology that makes use of electron/plasma ablation sources named Pulsed Plasma Deposition (PPD) developed by Organic Spintronics Srl.

The oxygen vacancies n-doped ZnO PPD grown thin film is deposited on PET and shows a resistivity of 3 x 10-4ohm cm. The n-ZnO TCO is compact, smooth and highly transparent in the UV-VIS (better than 90 T%) as well as in the near IR spectral range and it is remarkably temperature stable. Typical ZnO deposition rate of the PPD is 500 nm/min.

The RT deposited semiconductor ZnO shows a very large Hall electron mobility up to 1000 cm2/Vs approaching that of the single crystal. Preliminary results of Si/SiO2 based bottom gate and contact FET test pattern structures with a 50 nm overlaying ZnO thin film shows an ON/OFF ratio of 50000 and a FET mobility of 1 cm2/Vs. Further implementation on appropriate FET design will be performed to explore the possibility to achieve a larger FET mobility. The PPD proves to be an enabling technology that makes it possible the advent of flexible OLED displays.

Keywords

filmablationII-VI
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1436: Symposium K – Advanced Materials and Processes for Systems-on-Plastic , 2012 , mrss12-1436-k05-25
Copyright
Copyright © Materials Research Society 2012

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References

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