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Room Temperature Oxidation of Silicon Catalyzed by Cu3Si

Published online by Cambridge University Press:  21 February 2011

J.M.E. Harper ,
A. Charai ,
L. Stolt ,
F.M. d'Heurle  and
P.M. Fryer
J.M.E. Harper
Affiliation:
IBM Thomas J. Watson Research Center, Yorktown Heights, NY 10598
A. Charai
Affiliation:
Faculte de St. Jerome, 13397 Marseille, France
L. Stolt
Affiliation:
Institute for Microelectronics, 16428 Kista, Sweden
F.M. d'Heurle
Affiliation:
IBM Thomas J. Watson Research Center, Yorktown Heights, NY 10598
P.M. Fryer
Affiliation:
IBM Thomas J. Watson Research Center, Yorktown Heights, NY 10598
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Abstract

We demonstrate remarkably rapid oxidation of (100) silicon at room temperature catalyzed by the presence of Cu3Si. Thermal oxidation of Si is normally carried out at temperatures above 700°C. Oxidation of many metal silicides occurs more rapidly than that of Si, but under controlled conditions results in a surface layer of SiO2. In contrast, the oxidation process described here produces a thick layer of SiO2 underneath the copper-rich surface layer. The SiO2 layer grows spontaneously to over one micrometer in thickness in several weeks in air at room temperature. Analysis by Rutherford backscattering, Auger electron spectroscopy, cross-sectional transmission electron microscopy and scanning electron microscopy reveals the presence of Cu3Si at the buried SiO2/Si interface, epitaxially related to the underlying Si substrate. Catalytic action by this silicide phase appears responsible for the unusual oxidation process.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 187: Symposium J – Thin Film Structures and Phase Stability , 1990 , 107
Copyright
Copyright © Materials Research Society 1990

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